The effect of defects on time dependent dielectric breakdown acceleration in TiN/ZrO2/Al2O3/p-Ge gate stacks

Y. M. Ding, D. Misra, K. Tapily, R. D. Clark, S. Consiglio, C. S. Wajda, G. J. Leusink

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science