The effect of nonlinear ion transport on the rate of laser-induced electrochemical etching of semiconductors

H. Grebel, B. Iskandar, K. G. Sheppard

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Based on a nonlinear coupling between the etchant species and the photo-induced carriers during photoelectrochemical etching of semiconductor surfaces, we propose that an optimum exists for the reaction rate as a function of electrolyte concentration.

Original languageEnglish (US)
Pages (from-to)1947-1949
Number of pages3
JournalJournal of Applied Physics
Volume67
Issue number4
DOIs
StatePublished - 1990

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'The effect of nonlinear ion transport on the rate of laser-induced electrochemical etching of semiconductors'. Together they form a unique fingerprint.

Cite this