The effect of the chemical vapor deposition of tungsten on shallow n +p and p+n junctions using titanium-tungsten as a barrier

S. A. Eshraghi, G. E. Georgiou, R. Liu

Research output: Contribution to journalArticlepeer-review

Abstract

The effect of blanket chemical vapor deposition (CVD) of tungsten (SiH 4 reduction) on shallow CoSi2 junctions using 450-1800 Å of titanium-tungsten (TiW) as a diffusion barrier has been investigated. Thermal stability of W/TiW and Al/W/TiW is studied by measuring the reverse leakage current at 25 °C anneal intervals. The Al/TiW structure has been used as a reference. W/TiW junctions with ≤700 Å of TiW are less stable than Al/TiW junctions. The addition of Al on top of CVD W enhances the junction degradation considerably. p+n junctions are more sensitive to the barrier failure. The effect of CVD W deposition temperature has been studied. Junctions exposed to 480 °C CVD W deposition temperature showed a lower leakage than those at 300 °C.

Original languageEnglish (US)
Pages (from-to)2839-2844
Number of pages6
JournalJournal of Applied Physics
Volume68
Issue number6
DOIs
StatePublished - 1990
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'The effect of the chemical vapor deposition of tungsten on shallow n <sup>+</sup>p and p<sup>+</sup>n junctions using titanium-tungsten as a barrier'. Together they form a unique fingerprint.

Cite this