Abstract
Si/Fe and SiO2/Fe thin-film heterostructures are commonly seen in magnetic multilayer devices, whose magnetic properties are strongly influenced by intermixing at the interfaces. In this paper, Si-oxide/Fe bilayers were formed by depositing Si on Fe with in situ O2/Ar ion-beam bombardment during the Si deposition. The surface oxidation conditions were altered by applying different O2/Ar ratios (0-41%) in the ion-beam. The surface and cross-sectional morphologies, and the crystalline structures were characterized by transmission electron microscopy. The formation of Fe-O, Fe-Si and Si-O bonds at the interface of the O2/Ar ion-beam bombarded Si-oxide/Fe bilayers was evidenced by X-ray photoemission spectra. FeO, Fe3O4 and Fe2O3 at the interface resulted in a marked increase in the magnetic coercivity at low temperatures, as characterized by magnetometry.
Original language | English (US) |
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Pages (from-to) | 196-201 |
Number of pages | 6 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 365 |
DOIs | |
State | Published - Dec 15 2015 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Instrumentation
Keywords
- Interface
- Ion-beam bombardment
- Si-oxide/Fe bilayers
- Thin film magnetism