Photoluminescence and infrared absorption studies were performed on boron doped diamond films deposited on a synthetic nitrogen-doped diamond substrate. Based on the infrared absorption spectra, oxygen related defects and boron-nitrogen complexes formed during growth procedure were identified. In the photoluminescence experiment two new emission bands peaking at 693 and 602 nm were found. The narrow 602 nm band was attributed to the boron aggregates. The broad 693 nm band was assigned to the nitrogen centers disturbed by the presence of boron atoms. The interdiffusion of boron and nitrogen atoms is discussed.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering
- Boron doping
- CVD diamond films