The optical characterization of boron-doped MPCVD diamond films

H. Opyrchal, Ken K. Chin, Erhard Kohn, Wolfgang Ebert

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Photoluminescence and infrared absorption studies were performed on boron doped diamond films deposited on a synthetic nitrogen-doped diamond substrate. Based on the infrared absorption spectra, oxygen related defects and boron-nitrogen complexes formed during growth procedure were identified. In the photoluminescence experiment two new emission bands peaking at 693 and 602 nm were found. The narrow 602 nm band was attributed to the boron aggregates. The broad 693 nm band was assigned to the nitrogen centers disturbed by the presence of boron atoms. The interdiffusion of boron and nitrogen atoms is discussed.

Original languageEnglish (US)
Pages (from-to)940-943
Number of pages4
JournalDiamond and Related Materials
Volume6
Issue number8
DOIs
StatePublished - May 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Keywords

  • Boron doping
  • CVD diamond films
  • FTIR
  • Homoepitaxy
  • Photoluminescence

Fingerprint Dive into the research topics of 'The optical characterization of boron-doped MPCVD diamond films'. Together they form a unique fingerprint.

Cite this