The role of indium composition in InxGa1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

Samadrita Das; Trupti Ranjan Lenka; Fazal Ahmed Talukdar; Hieu Pham Trung Nguyen; Giovanni Crupi

doi:10.1002/jnm.3169

The role of indium composition in In_xGa_1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

Samadrita Das, Trupti Ranjan Lenka, Fazal Ahmed Talukdar, Hieu Pham Trung Nguyen, Giovanni Crupi

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this work, an electron blocking layer (EBL) free light emitting diode (LED) nanowire is proposed with alternate prestrained layers of In_xGa_1−xN/GaN, which are inserted between the GaN/InGaN multi-quantum wells (MQWs) and n-GaN layer. This study signifies the role of prestrained layers on the piezoelectric polarization of LED nanowires, for enhanced luminescence. When compared with the conventional one, the EBL free LED nanowire with prestrained layer shows an enhancement of ~2.897% efficiency, which occurs due to the reduction of polarization field in the active region. The LED with 15% indium in the prestrained layer obtains a maximum efficiency of 85.21% along with a minimum efficiency droop of 3.848% at 40 mA injected current. The proposed III-nitride LED nanostructure allows for achieving superior optical power across the output spectral range.

Original language	English (US)
Article number	e3169
Journal	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume	37
Issue number	2
DOIs	https://doi.org/10.1002/jnm.3169
State	Published - Mar 1 2024
Externally published	Yes

All Science Journal Classification (ASJC) codes

Modeling and Simulation
Computer Science Applications
Electrical and Electronic Engineering

Keywords

GaN
LED
electron blocking layer (EBL)
multi-quantum well (MQW)
quantum-confined Stark effect (QCSE)

Access to Document

10.1002/jnm.3169

Cite this

Das, S., Lenka, T. R., Talukdar, F. A., Nguyen, H. P. T., & Crupi, G. (2024). The role of indium composition in In_xGa_1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 37(2), Article e3169. https://doi.org/10.1002/jnm.3169

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abstract = "In this work, an electron blocking layer (EBL) free light emitting diode (LED) nanowire is proposed with alternate prestrained layers of InxGa1−xN/GaN, which are inserted between the GaN/InGaN multi-quantum wells (MQWs) and n-GaN layer. This study signifies the role of prestrained layers on the piezoelectric polarization of LED nanowires, for enhanced luminescence. When compared with the conventional one, the EBL free LED nanowire with prestrained layer shows an enhancement of ~2.897% efficiency, which occurs due to the reduction of polarization field in the active region. The LED with 15% indium in the prestrained layer obtains a maximum efficiency of 85.21% along with a minimum efficiency droop of 3.848% at 40 mA injected current. The proposed III-nitride LED nanostructure allows for achieving superior optical power across the output spectral range.",

keywords = "GaN, LED, electron blocking layer (EBL), multi-quantum well (MQW), quantum-confined Stark effect (QCSE)",

author = "Samadrita Das and Lenka, {Trupti Ranjan} and Talukdar, {Fazal Ahmed} and Nguyen, {Hieu Pham Trung} and Giovanni Crupi",

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The role of indium composition in In_xGa_1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence. / Das, Samadrita; Lenka, Trupti Ranjan; Talukdar, Fazal Ahmed et al.
In: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 37, No. 2, e3169, 01.03.2024.

Research output: Contribution to journal › Article › peer-review

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AU - Nguyen, Hieu Pham Trung

AU - Crupi, Giovanni

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