The role of indium composition in InxGa1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

Samadrita Das; Trupti Ranjan Lenka; Fazal Ahmed Talukdar; Hieu Pham Trung Nguyen; Giovanni Crupi

doi:10.1002/jnm.3169

The role of indium composition in In_xGa_1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

Samadrita Das, Trupti Ranjan Lenka, Fazal Ahmed Talukdar, Hieu Pham Trung Nguyen, Giovanni Crupi

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this work, an electron blocking layer (EBL) free light emitting diode (LED) nanowire is proposed with alternate prestrained layers of In_xGa_1−xN/GaN, which are inserted between the GaN/InGaN multi-quantum wells (MQWs) and n-GaN layer. This study signifies the role of prestrained layers on the piezoelectric polarization of LED nanowires, for enhanced luminescence. When compared with the conventional one, the EBL free LED nanowire with prestrained layer shows an enhancement of ~2.897% efficiency, which occurs due to the reduction of polarization field in the active region. The LED with 15% indium in the prestrained layer obtains a maximum efficiency of 85.21% along with a minimum efficiency droop of 3.848% at 40 mA injected current. The proposed III-nitride LED nanostructure allows for achieving superior optical power across the output spectral range.

Original language	English (US)
Journal	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
DOIs	https://doi.org/10.1002/jnm.3169
State	Accepted/In press - 2023
Externally published	Yes

All Science Journal Classification (ASJC) codes

Modeling and Simulation
Computer Science Applications
Electrical and Electronic Engineering

Keywords

GaN
LED
electron blocking layer (EBL)
multi-quantum well (MQW)
quantum-confined Stark effect (QCSE)

Access to Document

10.1002/jnm.3169

Cite this

@article{4d01566994a14e3c9c856bdbf273053f,

title = "The role of indium composition in InxGa1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence",

abstract = "In this work, an electron blocking layer (EBL) free light emitting diode (LED) nanowire is proposed with alternate prestrained layers of InxGa1−xN/GaN, which are inserted between the GaN/InGaN multi-quantum wells (MQWs) and n-GaN layer. This study signifies the role of prestrained layers on the piezoelectric polarization of LED nanowires, for enhanced luminescence. When compared with the conventional one, the EBL free LED nanowire with prestrained layer shows an enhancement of ~2.897% efficiency, which occurs due to the reduction of polarization field in the active region. The LED with 15% indium in the prestrained layer obtains a maximum efficiency of 85.21% along with a minimum efficiency droop of 3.848% at 40 mA injected current. The proposed III-nitride LED nanostructure allows for achieving superior optical power across the output spectral range.",

keywords = "GaN, LED, electron blocking layer (EBL), multi-quantum well (MQW), quantum-confined Stark effect (QCSE)",

author = "Samadrita Das and Lenka, {Trupti Ranjan} and Talukdar, {Fazal Ahmed} and Nguyen, {Hieu Pham Trung} and Giovanni Crupi",

note = "Publisher Copyright: {\textcopyright} 2023 John Wiley & Sons, Ltd.",

year = "2023",

doi = "10.1002/jnm.3169",

language = "English (US)",

journal = "International Journal of Numerical Modelling: Electronic Networks, Devices and Fields",

issn = "0894-3370",

publisher = "John Wiley and Sons Ltd",

}

The role of indium composition in In_xGa_1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence. / Das, Samadrita; Lenka, Trupti Ranjan; Talukdar, Fazal Ahmed et al.
In: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2023.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The role of indium composition in InxGa1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

AU - Das, Samadrita

AU - Lenka, Trupti Ranjan

AU - Talukdar, Fazal Ahmed

AU - Nguyen, Hieu Pham Trung

AU - Crupi, Giovanni

PY - 2023

Y1 - 2023

N2 - In this work, an electron blocking layer (EBL) free light emitting diode (LED) nanowire is proposed with alternate prestrained layers of InxGa1−xN/GaN, which are inserted between the GaN/InGaN multi-quantum wells (MQWs) and n-GaN layer. This study signifies the role of prestrained layers on the piezoelectric polarization of LED nanowires, for enhanced luminescence. When compared with the conventional one, the EBL free LED nanowire with prestrained layer shows an enhancement of ~2.897% efficiency, which occurs due to the reduction of polarization field in the active region. The LED with 15% indium in the prestrained layer obtains a maximum efficiency of 85.21% along with a minimum efficiency droop of 3.848% at 40 mA injected current. The proposed III-nitride LED nanostructure allows for achieving superior optical power across the output spectral range.

AB - In this work, an electron blocking layer (EBL) free light emitting diode (LED) nanowire is proposed with alternate prestrained layers of InxGa1−xN/GaN, which are inserted between the GaN/InGaN multi-quantum wells (MQWs) and n-GaN layer. This study signifies the role of prestrained layers on the piezoelectric polarization of LED nanowires, for enhanced luminescence. When compared with the conventional one, the EBL free LED nanowire with prestrained layer shows an enhancement of ~2.897% efficiency, which occurs due to the reduction of polarization field in the active region. The LED with 15% indium in the prestrained layer obtains a maximum efficiency of 85.21% along with a minimum efficiency droop of 3.848% at 40 mA injected current. The proposed III-nitride LED nanostructure allows for achieving superior optical power across the output spectral range.

KW - GaN

KW - LED

KW - electron blocking layer (EBL)

KW - multi-quantum well (MQW)

KW - quantum-confined Stark effect (QCSE)

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