The role of third cation doping on phase stability, carrier transport and carrier suppression in amorphous oxide semiconductors

Keyphrases

• Al Incorporation 20%
• Al-doped 20%
• Amorphous Oxide Semiconductor 100%
• Amorphous Oxide Thin-film Transistors 20%
• Amorphous Phase 40%
• Carrier Generation 20%
• Carrier Mobility 40%
• Carrier Suppression 100%
• Carrier Transport 100%
• Carrier Transport Properties 20%
• Cation Doping 100%
• Cation Species 20%
• Channel Layer 40%
• Chemical Properties 20%
• Current Saturation 20%
• Drain Current 20%
• Electrical Properties 20%
• Hall Effect 20%
• Hf Doping 20%
• High Drain Current 20%
• High Field-effect Mobility 20%
• High Mobility 20%
• High Performance 20%
• InAlZnO 60%
• InZnO 100%
• Material System 20%
• Next-Gen 20%
• On-off Ratio 20%
• Optoelectronic Properties 20%
• Phase Stability 100%
• Saturation Drain Current 20%
• Scattering Center 20%
• Si-doped 20%
• Strong Potential 20%
• Structural Properties 20%
• Sustainable Optoelectronics 20%
• Thermal Stress 20%
• Thin-film Transistors 20%
• Transistor 20%
• Transparent Display 20%
• Transparent Electronics 20%
• Transparent Optoelectronics 20%
• Transport Suppression 100%

Material Science

• Amorphous Material 100%
• Carrier Mobility 40%
• Carrier Transport 100%
• Chemical Property 20%
• Film 20%
• Oxide Compound 20%
• Oxide Semiconductor 100%
• Thermal Stress 20%
• Thin Films 20%
• Thin-Film Transistor 40%
• Transistor 20%