The SCALPEL proof of concept system

L. R. Harriott; S. D. Berger; C. Biddick; M. I. Blakey; S. W. Bowler; K. Brady; R. M. Camarda; W. F. Connelly; A. Crorken; J. Custy; R. DeMarco; R. C. Farrow; J. A. Felker; L. Fetter; R. Freeman; L. Hopkins; H. A. Huggins; C. S. Knurek; J. S. Kraus; J. A. Liddle; M. Mkrtychan; A. E. Novembre; M. L. Peabody; R. G. Tarascon; H. H. Wade; W. K. Waskiewicz; G. P. Watson; K. S. Werder; D. Windt

doi:10.1016/S0167-9317(96)00189-X

The SCALPEL proof of concept system

L. R. Harriott, S. D. Berger, C. Biddick, M. I. Blakey, S. W. Bowler, K. Brady, R. M. Camarda, W. F. Connelly, A. Crorken, J. Custy, R. DeMarco, R. C. Farrow, J. A. Felker, L. Fetter, R. Freeman, L. Hopkins, H. A. Huggins, C. S. Knurek, J. S. Kraus, J. A. LiddleM. Mkrtychan, A. E. Novembre, M. L. Peabody, R. G. Tarascon, H. H. Wade, W. K. Waskiewicz, G. P. Watson, K. S. Werder, D. Windt

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We have designed and constructed a projection electron beam lithography system based on the SCALPEL (SCattering with Angular Limitation in Projection Electron beam Lithography) principle. The experimental tool was built to analyze the efficacy of this approach as an alternative to photolithography for future integrated circuit manufacturing. In this paper we will describe the design of the system and show preliminary results of test pattern exposures. We will show printed features down to 0.08 μm as well as lithographic properties, such as depth of focus, which has been measured at 75 μm for 0.25 μm lines and spaces.

Original language	English (US)
Pages (from-to)	477-480
Number of pages	4
Journal	Microelectronic Engineering
Volume	35
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(96)00189-X
State	Published - Feb 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(96)00189-X

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Harriott, L. R., Berger, S. D., Biddick, C., Blakey, M. I., Bowler, S. W., Brady, K., Camarda, R. M., Connelly, W. F., Crorken, A., Custy, J., DeMarco, R., Farrow, R. C., Felker, J. A., Fetter, L., Freeman, R., Hopkins, L., Huggins, H. A., Knurek, C. S., Kraus, J. S., ... Windt, D. (1997). The SCALPEL proof of concept system. Microelectronic Engineering, 35(1-4), 477-480. https://doi.org/10.1016/S0167-9317(96)00189-X

@article{568bff71ad93474c85b44201b4de48c3,

title = "The SCALPEL proof of concept system",

abstract = "We have designed and constructed a projection electron beam lithography system based on the SCALPEL (SCattering with Angular Limitation in Projection Electron beam Lithography) principle. The experimental tool was built to analyze the efficacy of this approach as an alternative to photolithography for future integrated circuit manufacturing. In this paper we will describe the design of the system and show preliminary results of test pattern exposures. We will show printed features down to 0.08 μm as well as lithographic properties, such as depth of focus, which has been measured at 75 μm for 0.25 μm lines and spaces.",

author = "Harriott, {L. R.} and Berger, {S. D.} and C. Biddick and Blakey, {M. I.} and Bowler, {S. W.} and K. Brady and Camarda, {R. M.} and Connelly, {W. F.} and A. Crorken and J. Custy and R. DeMarco and Farrow, {R. C.} and Felker, {J. A.} and L. Fetter and R. Freeman and L. Hopkins and Huggins, {H. A.} and Knurek, {C. S.} and Kraus, {J. S.} and Liddle, {J. A.} and M. Mkrtychan and Novembre, {A. E.} and Peabody, {M. L.} and Tarascon, {R. G.} and Wade, {H. H.} and Waskiewicz, {W. K.} and Watson, {G. P.} and Werder, {K. S.} and D. Windt",

year = "1997",

month = feb,

doi = "10.1016/S0167-9317(96)00189-X",

language = "English (US)",

volume = "35",

pages = "477--480",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1-4",

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Harriott, LR, Berger, SD, Biddick, C, Blakey, MI, Bowler, SW, Brady, K, Camarda, RM, Connelly, WF, Crorken, A, Custy, J, DeMarco, R, Farrow, RC, Felker, JA, Fetter, L, Freeman, R, Hopkins, L, Huggins, HA, Knurek, CS, Kraus, JS, Liddle, JA, Mkrtychan, M, Novembre, AE, Peabody, ML, Tarascon, RG, Wade, HH, Waskiewicz, WK, Watson, GP, Werder, KS & Windt, D 1997, 'The SCALPEL proof of concept system', Microelectronic Engineering, vol. 35, no. 1-4, pp. 477-480. https://doi.org/10.1016/S0167-9317(96)00189-X

TY - JOUR

T1 - The SCALPEL proof of concept system

AU - Harriott, L. R.

AU - Berger, S. D.

AU - Biddick, C.

AU - Blakey, M. I.

AU - Bowler, S. W.

AU - Brady, K.

AU - Camarda, R. M.

AU - Connelly, W. F.

AU - Crorken, A.

AU - Custy, J.

AU - DeMarco, R.

AU - Farrow, R. C.

AU - Felker, J. A.

AU - Fetter, L.

AU - Freeman, R.

AU - Hopkins, L.

AU - Huggins, H. A.

AU - Knurek, C. S.

AU - Kraus, J. S.

AU - Liddle, J. A.

AU - Mkrtychan, M.

AU - Novembre, A. E.

AU - Peabody, M. L.

AU - Tarascon, R. G.

AU - Wade, H. H.

AU - Waskiewicz, W. K.

AU - Watson, G. P.

AU - Werder, K. S.

AU - Windt, D.

PY - 1997/2

Y1 - 1997/2

N2 - We have designed and constructed a projection electron beam lithography system based on the SCALPEL (SCattering with Angular Limitation in Projection Electron beam Lithography) principle. The experimental tool was built to analyze the efficacy of this approach as an alternative to photolithography for future integrated circuit manufacturing. In this paper we will describe the design of the system and show preliminary results of test pattern exposures. We will show printed features down to 0.08 μm as well as lithographic properties, such as depth of focus, which has been measured at 75 μm for 0.25 μm lines and spaces.

AB - We have designed and constructed a projection electron beam lithography system based on the SCALPEL (SCattering with Angular Limitation in Projection Electron beam Lithography) principle. The experimental tool was built to analyze the efficacy of this approach as an alternative to photolithography for future integrated circuit manufacturing. In this paper we will describe the design of the system and show preliminary results of test pattern exposures. We will show printed features down to 0.08 μm as well as lithographic properties, such as depth of focus, which has been measured at 75 μm for 0.25 μm lines and spaces.

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U2 - 10.1016/S0167-9317(96)00189-X

DO - 10.1016/S0167-9317(96)00189-X

M3 - Article

AN - SCOPUS:0031072164

SN - 0167-9317

VL - 35

SP - 477

EP - 480

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

The SCALPEL proof of concept system

Abstract

All Science Journal Classification (ASJC) codes

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