The steady state hole mobility lifetime product in undoped a-Si:H

J. Z. Liu, A. Maruyama, S. Wagner, A. Delahoy

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


We have applied the steady state photocarrier grating technique to study the hole mobility lifetime product (μτ)p near the room temperature in undoped a-Si:H. The dependences of (μτ)p on temperature and generation rate fit well the theoretical relation derived here. The low activation energy of (μτ)p is due to the strong temperature dependence of the quasi-Fermi level for the holes.

Original languageEnglish (US)
Pages (from-to)363-365
Number of pages3
JournalJournal of Non-Crystalline Solids
Issue numberPART 1
StatePublished - Dec 1 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry


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