The steady state hole mobility lifetime product in undoped a-Si:H

J. Z. Liu; A. Maruyama; S. Wagner; A. Delahoy

doi:10.1016/0022-3093(89)90164-6

The steady state hole mobility lifetime product in undoped a-Si:H

J. Z. Liu, A. Maruyama, S. Wagner, A. Delahoy

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We have applied the steady state photocarrier grating technique to study the hole mobility lifetime product (μτ)_p near the room temperature in undoped a-Si:H. The dependences of (μτ)_p on temperature and generation rate fit well the theoretical relation derived here. The low activation energy of (μτ)_p is due to the strong temperature dependence of the quasi-Fermi level for the holes.

Original language	English (US)
Pages (from-to)	363-365
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	114
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(89)90164-6
State	Published - Dec 1 1989
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(89)90164-6

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title = "The steady state hole mobility lifetime product in undoped a-Si:H",

abstract = "We have applied the steady state photocarrier grating technique to study the hole mobility lifetime product (μτ)p near the room temperature in undoped a-Si:H. The dependences of (μτ)p on temperature and generation rate fit well the theoretical relation derived here. The low activation energy of (μτ)p is due to the strong temperature dependence of the quasi-Fermi level for the holes.",

author = "Liu, {J. Z.} and A. Maruyama and S. Wagner and A. Delahoy",

note = "Funding Information: ACKNOWLEDGEMENT We thank H. Fritzsche and M. Hack for discussions on electronic transport. This work is supported by the Electric Power Research Institute under Contract No. RP2824-2.",

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T1 - The steady state hole mobility lifetime product in undoped a-Si:H

AU - Liu, J. Z.

AU - Maruyama, A.

AU - Wagner, S.

AU - Delahoy, A.

N1 - Funding Information: ACKNOWLEDGEMENT We thank H. Fritzsche and M. Hack for discussions on electronic transport. This work is supported by the Electric Power Research Institute under Contract No. RP2824-2.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - We have applied the steady state photocarrier grating technique to study the hole mobility lifetime product (μτ)p near the room temperature in undoped a-Si:H. The dependences of (μτ)p on temperature and generation rate fit well the theoretical relation derived here. The low activation energy of (μτ)p is due to the strong temperature dependence of the quasi-Fermi level for the holes.

AB - We have applied the steady state photocarrier grating technique to study the hole mobility lifetime product (μτ)p near the room temperature in undoped a-Si:H. The dependences of (μτ)p on temperature and generation rate fit well the theoretical relation derived here. The low activation energy of (μτ)p is due to the strong temperature dependence of the quasi-Fermi level for the holes.

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

The steady state hole mobility lifetime product in undoped a-Si:H

Abstract

All Science Journal Classification (ASJC) codes

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