The steady state occupancy and Effective Fermi Level of P-N junction

Zimeng Cheng; Ken K. Chin

doi:10.1109/PVSC.2012.6317560

The steady state occupancy and Effective Fermi Level of P-N junction

Zimeng Cheng, Ken K. Chin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Explicit difference between occupation probability of the transition Gibbs free energy level (TGFEL) of semiconductor under equilibrium and that under steady state is pointed out. Our own computer simulation results are presented to show the detailed steady state occupancy of TGFELs under forward and reverse bias cases The result shows that Quasi Fermi levels and capture cross section of defects which is due to columbic interaction or other effects determine the different occupation probability in the region where Quasi Fermi levels are present. An Effective Fermi Level E_F^eff is defined for these two cases of the semiconductor P-N junction, with the presence of two Quasi Fermi levels.

Original language	English (US)
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	25-28
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2012.6317560
State	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: Jun 3 2012 → Jun 8 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	6/3/12 → 6/8/12

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2012.6317560

Cite this

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title = "The steady state occupancy and Effective Fermi Level of P-N junction",

abstract = "Explicit difference between occupation probability of the transition Gibbs free energy level (TGFEL) of semiconductor under equilibrium and that under steady state is pointed out. Our own computer simulation results are presented to show the detailed steady state occupancy of TGFELs under forward and reverse bias cases The result shows that Quasi Fermi levels and capture cross section of defects which is due to columbic interaction or other effects determine the different occupation probability in the region where Quasi Fermi levels are present. An Effective Fermi Level EFeff is defined for these two cases of the semiconductor P-N junction, with the presence of two Quasi Fermi levels.",

author = "Zimeng Cheng and Chin, {Ken K.}",

year = "2012",

doi = "10.1109/PVSC.2012.6317560",

language = "English (US)",

isbn = "9781467300643",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "25--28",

booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",

note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

Cheng, Z & Chin, KK 2012, The steady state occupancy and Effective Fermi Level of P-N junction. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317560, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 25-28, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6317560

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AU - Chin, Ken K.

PY - 2012

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N2 - Explicit difference between occupation probability of the transition Gibbs free energy level (TGFEL) of semiconductor under equilibrium and that under steady state is pointed out. Our own computer simulation results are presented to show the detailed steady state occupancy of TGFELs under forward and reverse bias cases The result shows that Quasi Fermi levels and capture cross section of defects which is due to columbic interaction or other effects determine the different occupation probability in the region where Quasi Fermi levels are present. An Effective Fermi Level EFeff is defined for these two cases of the semiconductor P-N junction, with the presence of two Quasi Fermi levels.

AB - Explicit difference between occupation probability of the transition Gibbs free energy level (TGFEL) of semiconductor under equilibrium and that under steady state is pointed out. Our own computer simulation results are presented to show the detailed steady state occupancy of TGFELs under forward and reverse bias cases The result shows that Quasi Fermi levels and capture cross section of defects which is due to columbic interaction or other effects determine the different occupation probability in the region where Quasi Fermi levels are present. An Effective Fermi Level EFeff is defined for these two cases of the semiconductor P-N junction, with the presence of two Quasi Fermi levels.

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DO - 10.1109/PVSC.2012.6317560

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BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

The steady state occupancy and Effective Fermi Level of P-N junction

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