The steady state occupancy and Effective Fermi Level of P-N junction

Zimeng Cheng, Ken Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Explicit difference between occupation probability of the transition Gibbs free energy level (TGFEL) of semiconductor under equilibrium and that under steady state is pointed out. Our own computer simulation results are presented to show the detailed steady state occupancy of TGFELs under forward and reverse bias cases The result shows that Quasi Fermi levels and capture cross section of defects which is due to columbic interaction or other effects determine the different occupation probability in the region where Quasi Fermi levels are present. An Effective Fermi Level EFeff is defined for these two cases of the semiconductor P-N junction, with the presence of two Quasi Fermi levels.

Original languageEnglish (US)
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages25-28
Number of pages4
DOIs
StatePublished - Nov 26 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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