Thermal crystallization of amorphous Si/SiO2 superlattices

M. Zacharias, J. Bläsing, P. Veit, L. Tsybeskov, K. Hirschman, P. M. Fauchet

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188 Scopus citations


Annealing of amorphous Si/SiO2 superlattices produces Si nanocrystals. The crystallization has been studied by transmission electron microscopy and x-ray analysis. For a Si layer thinner than 7 nm, nearly perfect nanocrystals are found. For thicker layers, growth faults and dislocations exist. Decreasing the a-Si layer thickness increases the inhomogeneous strain by one order of magnitude. The origin of the strain in the crystallized structure is discussed. The crystallization temperature increases rapidly with decreasing a-Si layer thickness. An empirical model that takes into account the Si layer thickness, the Si/SiO2 interface range, and a material specific constant has been developed.

Original languageEnglish (US)
Pages (from-to)2614-2616
Number of pages3
JournalApplied Physics Letters
Issue number18
StatePublished - May 3 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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