Abstract
We have investigated the thermoelectric (TE) properties of films composed of aligned and randomly dispersed n -type, p -type, and p-n junctions. The TE voltage that was developed across aligned films was larger than the voltage developed along their axis of symmetry by a factor of almost 3. The TE voltage that developed across aligned and parallel p-n junction was almost seven times larger then the voltage developed over randomly oriented p -type only films.
Original language | English (US) |
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Article number | 203116 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 20 |
DOIs | |
State | Published - 2008 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)