We have investigated the thermoelectric (TE) properties of films composed of aligned and randomly dispersed n -type, p -type, and p-n junctions. The TE voltage that was developed across aligned films was larger than the voltage developed along their axis of symmetry by a factor of almost 3. The TE voltage that developed across aligned and parallel p-n junction was almost seven times larger then the voltage developed over randomly oriented p -type only films.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - 2008|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)