Abstract
We have investigated the thermoelectric (TE) properties of films composed of aligned and randomly dispersed n -type, p -type, and p-n junctions. The TE voltage that was developed across aligned films was larger than the voltage developed along their axis of symmetry by a factor of almost 3. The TE voltage that developed across aligned and parallel p-n junction was almost seven times larger then the voltage developed over randomly oriented p -type only films.
| Original language | English (US) |
|---|---|
| Article number | 203116 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 20 |
| DOIs | |
| State | Published - 2008 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)