Thin terahertz detectors and emitters based on low-temperature-grown GaAs on sapphire

O. Mitrofanov; I. Brener; M. C. Wanke; R. R. Ruel; J. D. Wynn; A. J. Bruce; J. Federici

doi:10.1109/cleo.2000.907347

Thin terahertz detectors and emitters based on low-temperature-grown GaAs on sapphire

O. Mitrofanov, I. Brener, M. C. Wanke, R. R. Ruel, J. D. Wynn, A. J. Bruce, J. Federici

Physics

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

Presented is a fabrication technique, alternative to epitaxial liftoff, which enhances the performance of THz antenna detectors and allows building probe structures on top of the antenna dipole by means of etching of GaAs substrate. When used as emitters, a sample to be imaged can be brought as close as 1 μm to the THz emission point. The application of these devices for THz near-field-imaging will be discussed.

Original language	English (US)
Pages	528-529
Number of pages	2
DOIs	https://doi.org/10.1109/cleo.2000.907347
State	Published - 2000
Event	Conference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA Duration: May 7 2000 → May 12 2000

Other

Other	Conference on Lasers and Electro-Optics (CLEO 2000)
City	San Francisco, CA, USA
Period	5/7/00 → 5/12/00

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/cleo.2000.907347

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abstract = "Presented is a fabrication technique, alternative to epitaxial liftoff, which enhances the performance of THz antenna detectors and allows building probe structures on top of the antenna dipole by means of etching of GaAs substrate. When used as emitters, a sample to be imaged can be brought as close as 1 μm to the THz emission point. The application of these devices for THz near-field-imaging will be discussed.",

author = "O. Mitrofanov and I. Brener and Wanke, {M. C.} and Ruel, {R. R.} and Wynn, {J. D.} and Bruce, {A. J.} and J. Federici",

year = "2000",

doi = "10.1109/cleo.2000.907347",

language = "English (US)",

pages = "528--529",

note = "Conference on Lasers and Electro-Optics (CLEO 2000) ; Conference date: 07-05-2000 Through 12-05-2000",

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TY - CONF

T1 - Thin terahertz detectors and emitters based on low-temperature-grown GaAs on sapphire

AU - Mitrofanov, O.

AU - Brener, I.

AU - Wanke, M. C.

AU - Ruel, R. R.

AU - Wynn, J. D.

AU - Bruce, A. J.

AU - Federici, J.

PY - 2000

Y1 - 2000

N2 - Presented is a fabrication technique, alternative to epitaxial liftoff, which enhances the performance of THz antenna detectors and allows building probe structures on top of the antenna dipole by means of etching of GaAs substrate. When used as emitters, a sample to be imaged can be brought as close as 1 μm to the THz emission point. The application of these devices for THz near-field-imaging will be discussed.

AB - Presented is a fabrication technique, alternative to epitaxial liftoff, which enhances the performance of THz antenna detectors and allows building probe structures on top of the antenna dipole by means of etching of GaAs substrate. When used as emitters, a sample to be imaged can be brought as close as 1 μm to the THz emission point. The application of these devices for THz near-field-imaging will be discussed.

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U2 - 10.1109/cleo.2000.907347

DO - 10.1109/cleo.2000.907347

M3 - Paper

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EP - 529

T2 - Conference on Lasers and Electro-Optics (CLEO 2000)

Y2 - 7 May 2000 through 12 May 2000

ER -

Thin terahertz detectors and emitters based on low-temperature-grown GaAs on sapphire

Abstract

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All Science Journal Classification (ASJC) codes

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