Thin terahertz detectors and emitters based on low-temperature-grown GaAs on sapphire

O. Mitrofanov, I. Brener, M. C. Wanke, R. R. Ruel, J. D. Wynn, A. J. Bruce, J. Federici

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

Presented is a fabrication technique, alternative to epitaxial liftoff, which enhances the performance of THz antenna detectors and allows building probe structures on top of the antenna dipole by means of etching of GaAs substrate. When used as emitters, a sample to be imaged can be brought as close as 1 μm to the THz emission point. The application of these devices for THz near-field-imaging will be discussed.

Original languageEnglish (US)
Pages528-529
Number of pages2
DOIs
StatePublished - 2000
EventConference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA
Duration: May 7 2000May 12 2000

Other

OtherConference on Lasers and Electro-Optics (CLEO 2000)
CitySan Francisco, CA, USA
Period5/7/005/12/00

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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