Three-dimensional silicon-germanium nanostructures for CMOS compatible light emitters and optical interconnects

L. Tsybeskov, E. K. Lee, H. Y. Chang, B. V. Kamenev, D. J. Lockwood, J. M. Baribeau, T. I. Kamins

Research output: Contribution to journalReview articlepeer-review

5 Scopus citations

Abstract

Three-dimensional SiGe nanostructures grown on Si (SiGe/Si) using molecular beam epitaxy or low-pressure chemical vapor deposition exhibit photoluminescence and electroluminescence in the important spectral range of 1.3-1.6 μm. At a high level of photoexcitation or carrier injection, thermal quenching of the luminescence intensity is suppressed and the previously confirmed type-II energy band alignment at Si/SiGe cluster heterointerfaces no longer controls radiative carrier recombination. Instead, a recently proposed dynamic type-I energy band alignment is found to be responsible for the strong decrease in carrier radiative lifetime and further increase in the luminescence quantum efficiency.

Original languageEnglish (US)
Article number218032
JournalAdvances in Optical Technologies
DOIs
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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