Three-dimensional silicon-germanium nanostructures for CMOS compatible light emitters and optical interconnects

Engineering & Materials Science

• Luminescence 100%
• Band structure 94%
• Germanium 90%
• Optical interconnects 89%
• Nanostructures 82%
• Photoexcitation 62%
• Low pressure chemical vapor deposition 55%
• Photoluminescence 55%
• Electroluminescence 53%
• Silicon 53%
• Quantum efficiency 52%
• Molecular beam epitaxy 52%
• Quenching 35%
• Hot Temperature 16%

Physics & Astronomy

• optical interconnects 81%
• energy bands 63%
• CMOS 60%
• germanium 60%
• emitters 56%
• alignment 52%
• luminescence 51%
• carrier injection 40%
• radiative lifetime 39%
• photoexcitation 37%
• silicon 36%
• electroluminescence 34%
• quantum efficiency 30%
• molecular beam epitaxy 28%
• low pressure 28%
• quenching 27%
• vapor deposition 26%
• photoluminescence 23%

Chemical Compounds

• Electronic Band Structure 68%
• Low Pressure Chemical Vapour Deposition 49%
• Molecular Beam Epitaxy 48%
• Luminiscence Type 48%
• Nanomaterial 42%
• Photoexcitation 37%
• Electroluminescence 35%
• Photoluminescence 26%
• Molecular Cluster 22%