Three-dimensional silicon-germanium nanostructures for CMOS compatible light emitters and optical interconnects

Keyphrases

• Carrier Injection 50%
• Carrier Recombination 50%
• CMOS Technology 100%
• Dynamic Types 50%
• Electroluminescence 50%
• Energy Level Alignment 100%
• Germanium Nanowire (GeNW) 100%
• Heterointerface 50%
• I-Energy 50%
• Light Emitters 100%
• Low Pressure Chemical Vapor Deposition (LPCVD) 50%
• Luminescence Intensity 50%
• Luminescence Quantum Efficiency 50%
• Molecular Beam Epitaxy 50%
• Optical Interconnects 100%
• Photoexcitation 50%
• Photoluminescence 50%
• Radiative Lifetime 50%
• SiGe 100%
• SiGe Nanostructures 50%
• Silicon-germanium 100%
• Spectral Range 50%
• Thermal Quenching 50%
• Three-dimensional (3D) 100%

Material Science

• Electroluminescence 50%
• Germanium 100%
• Low Pressure Chemical Vapor Deposition 50%
• Luminescence 100%
• Molecular Beam Epitaxy 50%
• Nanocrystalline Material 100%
• Photoluminescence 50%
• Silicon 100%

Engineering

• Chemical Vapor Deposition 50%
• Energy Band 100%
• Optical Interconnect 100%
• Quantum Efficiency 50%
• Spectral Range 50%
• Vapor Deposition 50%