Time dependent dielectric breakdown of thermally evaporated HfO ₂ for nanoscale devices

Keyphrases

• Oxides 100%
• Nanoscale Devices 100%
• HfO2 100%
• Time-dependent Dielectric Breakdown 100%
• Constant Current Stress 100%
• Energetic Electrons 50%
• Condensation 50%
• Dielectric Breakdown 50%
• Stress Level 50%
• Anodic 50%
• Generation Mechanism 50%
• Stress-induced 50%
• Annealing 50%
• Rate of Increase 50%
• Trap Generation 50%
• Breakdown Characteristics 50%
• Interfacial Layer 50%
• Electron Injection 50%
• Charge Trapping 50%
• HfO2 Films 50%
• Charging Time 50%
• Oxide Field 50%
• Interface Generation 50%
• Effective Barrier Height 50%
• Generation Rate 50%
• Weibull Plot 50%
• Charge to Breakdown 50%
• Bulk Traps 50%
• Intrinsic Breakdown 50%

Engineering

• Nanoscale 100%
• Dielectrics 100%
• Electric Field 33%
• Defects 33%
• Stress Level 33%
• Energetics 33%
• Induced Stress 33%
• Interfacial Layer 33%
• Interface State 33%
• Rate Increase 33%
• Barrier Height 33%

Material Science

• Oxide Compound 100%
• Electrical Breakdown 100%
• Film 50%
• Charge Trapping 25%