Abstract
The photocurrent kinetics and carrier transport in nanocrystalline silicon (Si)/amorphous silicon dioxide superlattices were analyzed. The superlattices with silicon nanocrystals revealed a sharp resonance in conductivity at a low applied bias. The superlattices were deposited by alternating rf magnetron sputtering and plasma oxidation. The results show that the fast photocurrent transient was associated with resonant hole tunneling throughout the Si superlattices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 5229-5231 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 25 |
| DOIs | |
| State | Published - Dec 22 2003 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)