Time-resolved carrier tunneling in nanocrystalline silicon/amorphous silicon dioxide superlattices

V. Duzhko, L. Tsybeskov

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The photocurrent kinetics and carrier transport in nanocrystalline silicon (Si)/amorphous silicon dioxide superlattices were analyzed. The superlattices with silicon nanocrystals revealed a sharp resonance in conductivity at a low applied bias. The superlattices were deposited by alternating rf magnetron sputtering and plasma oxidation. The results show that the fast photocurrent transient was associated with resonant hole tunneling throughout the Si superlattices.

Original languageEnglish (US)
Pages (from-to)5229-5231
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number25
DOIs
StatePublished - Dec 22 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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