Synchrotron-based x-ray radiation has been utilized to measure time-resolved x-ray excited optical luminescence (TR-XEOL) from InGaN/GaN multiple quantum well (MQW) structures. Excess carrier recombination lifetimes were determined for MQWs grown on conventional c-plane as well as on non-polar m-plane substrates. In addition, the simultaneous measurement of XEOL and x-ray fluorescence reveals an interaction between inner-core excitations of Si impurities and bound exciton recombination in doped GaN-based device structures. Furthermore, the TR-XEOL characterization technique were also applied to InGaN/GaN MQWs grown on GaN inverted pyramid structures.
|Original language||English (US)|
|Journal||Journal of Applied Physics|
|State||Published - Jun 15 2011|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)