Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures

S. M. O'Malley, P. Revesz, A. Kazimirov, A. A. Sirenko

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Synchrotron-based x-ray radiation has been utilized to measure time-resolved x-ray excited optical luminescence (TR-XEOL) from InGaN/GaN multiple quantum well (MQW) structures. Excess carrier recombination lifetimes were determined for MQWs grown on conventional c-plane as well as on non-polar m-plane substrates. In addition, the simultaneous measurement of XEOL and x-ray fluorescence reveals an interaction between inner-core excitations of Si impurities and bound exciton recombination in doped GaN-based device structures. Furthermore, the TR-XEOL characterization technique were also applied to InGaN/GaN MQWs grown on GaN inverted pyramid structures.

Original languageEnglish (US)
Article number124906
JournalJournal of Applied Physics
Volume109
Issue number12
DOIs
StatePublished - Jun 15 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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