Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures

S. M. O'Malley; P. Revesz; A. Kazimirov; A. A. Sirenko

doi:10.1063/1.3598137

Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures

S. M. O'Malley, P. Revesz, A. Kazimirov, A. A. Sirenko

Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Synchrotron-based x-ray radiation has been utilized to measure time-resolved x-ray excited optical luminescence (TR-XEOL) from InGaN/GaN multiple quantum well (MQW) structures. Excess carrier recombination lifetimes were determined for MQWs grown on conventional c-plane as well as on non-polar m-plane substrates. In addition, the simultaneous measurement of XEOL and x-ray fluorescence reveals an interaction between inner-core excitations of Si impurities and bound exciton recombination in doped GaN-based device structures. Furthermore, the TR-XEOL characterization technique were also applied to InGaN/GaN MQWs grown on GaN inverted pyramid structures.

Original language	English (US)
Article number	124906
Journal	Journal of Applied Physics
Volume	109
Issue number	12
DOIs	https://doi.org/10.1063/1.3598137
State	Published - Jun 15 2011

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.3598137

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title = "Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures",

abstract = "Synchrotron-based x-ray radiation has been utilized to measure time-resolved x-ray excited optical luminescence (TR-XEOL) from InGaN/GaN multiple quantum well (MQW) structures. Excess carrier recombination lifetimes were determined for MQWs grown on conventional c-plane as well as on non-polar m-plane substrates. In addition, the simultaneous measurement of XEOL and x-ray fluorescence reveals an interaction between inner-core excitations of Si impurities and bound exciton recombination in doped GaN-based device structures. Furthermore, the TR-XEOL characterization technique were also applied to InGaN/GaN MQWs grown on GaN inverted pyramid structures.",

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T1 - Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures

AU - O'Malley, S. M.

AU - Revesz, P.

AU - Kazimirov, A.

AU - Sirenko, A. A.

PY - 2011/6/15

Y1 - 2011/6/15

N2 - Synchrotron-based x-ray radiation has been utilized to measure time-resolved x-ray excited optical luminescence (TR-XEOL) from InGaN/GaN multiple quantum well (MQW) structures. Excess carrier recombination lifetimes were determined for MQWs grown on conventional c-plane as well as on non-polar m-plane substrates. In addition, the simultaneous measurement of XEOL and x-ray fluorescence reveals an interaction between inner-core excitations of Si impurities and bound exciton recombination in doped GaN-based device structures. Furthermore, the TR-XEOL characterization technique were also applied to InGaN/GaN MQWs grown on GaN inverted pyramid structures.

AB - Synchrotron-based x-ray radiation has been utilized to measure time-resolved x-ray excited optical luminescence (TR-XEOL) from InGaN/GaN multiple quantum well (MQW) structures. Excess carrier recombination lifetimes were determined for MQWs grown on conventional c-plane as well as on non-polar m-plane substrates. In addition, the simultaneous measurement of XEOL and x-ray fluorescence reveals an interaction between inner-core excitations of Si impurities and bound exciton recombination in doped GaN-based device structures. Furthermore, the TR-XEOL characterization technique were also applied to InGaN/GaN MQWs grown on GaN inverted pyramid structures.

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Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures

Abstract

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