Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures

Keyphrases

• Bound Exciton 33%
• C-plane 33%
• Carrier Recombination Lifetime 33%
• Characterization Techniques 33%
• Core Excitation 33%
• Device Structure 33%
• Doped GaN 33%
• Excess Carriers 33%
• Exciton Recombination 33%
• GaN-based Devices 33%
• Indium Gallium Nitride (InGaN) 100%
• Inner Core 33%
• Inverted Pyramid 33%
• Luminescence Characterization 33%
• M-plane 33%
• Multiple Quantum Well Structure 100%
• Optical Luminescence 100%
• Plane Substrate 33%
• Si Impurity 33%
• Simultaneous Measurement 33%
• Synchrotron Techniques 33%
• Time-resolved 100%
• X-ray Irradiation 33%

Engineering

• Device Structure 50%
• Excess Carrier 50%
• Quantum Well 100%
• Ray Radiation 50%
• Recombination Lifetime 50%

Physics

• Exciton 50%
• Multiple Quantum Well 100%
• Synchrotron 50%