TiN/HfO₂/SiO₂/Si gate stack breakdown: Contribution of HfO₂ and interfacial SiO₂ layer

Keyphrases

• HfO2 100%
• Silica 100%
• Gate Stack 100%
• SiO2 Layer 100%
• Interfacial Layer 75%
• Breakdown Mechanism 50%
• In Situ 25%
• Growth Conditions 25%
• Stress-induced 25%
• Breakdown Characteristics 25%
• Steam 25%
• Charge Trapping 25%
• Stress Induced Leakage Current 25%
• Trap Formation 25%
• Metal-insulator-metal Capacitor 25%
• Metal-oxide-semiconductor Capacitor (MOSCAP) 25%
• Breakdown Behavior 25%
• Defect Generation 25%
• Soft Spot 25%
• Leakage Current Measurement 25%

Engineering

• Sio2 Layer 100%
• Gate Stack 100%
• Interfacial Layer 75%
• Defects 25%
• Induced Stress 25%
• Growth Condition 25%
• Stress Induced Leakage Current 25%
• Metal Oxide Semiconductor 25%
• Metal-Insulator-Metal 25%
• Current Measurement 25%

Material Science

• Capacitor 100%
• Metal Oxide 50%
• Charge Trapping 50%
• Oxide Semiconductor 50%