Top and bottom surfaces limit carrier lifetime in lead iodide perovskite films

Keyphrases

• Carrier Recombination 100%
• Grain Boundary 100%
• Surface Recombination 100%
• Carrier Lifetime 100%
• Carrier Dynamics 100%
• Perovskite Film 100%
• Lead Iodide Perovskite 100%
• Polycrystalline Films 100%
• Order of Magnitude 50%
• Solar Cell Devices 50%
• Single Crystal 50%
• Recombination 50%
• Perovskite 50%
• Bulk Crystal 50%
• Surface Passivation 50%
• Transient Reflection Spectroscopy 50%
• Surface Boundary 50%
• Solar Energy Conversion System 50%
• Polycrystalline Thin Films 50%
• Photoelectrochemical Devices 50%
• Grain Boundary Recombination 50%
• Extended Defects 50%
• Surface Recombination Velocity 50%
• Methylammonium Lead Iodide Perovskite 50%

Engineering

• Polycrystalline 100%
• Grain Boundary 100%
• Carrier Lifetime 100%
• Bottom Surface 100%
• Defects 66%
• Thin Films 66%
• Energy Conversion 33%
• Solar Cell 33%
• Solar Energy 33%
• Transients 33%
• Bulk Crystal 33%
• Passivation 33%
• Extended Defect 33%
• Surface Recombination Velocity 33%

Material Science

• Film 100%
• Carrier Lifetime 100%
• Grain Boundary 75%
• Thin Films 50%
• Solar Cell 25%
• Single Crystal 25%
• Surface Passivation 25%
• Point Defect 25%