TY - JOUR
T1 - Transfer of graphene with protective oxide layers
AU - Grebel, Haim
AU - Stan, Liliana
AU - Sumant, Anirudha V.
AU - Liu, Yuzi
AU - Gosztola, David
AU - Ocola, Leonidas
AU - Fisher, Brandon
N1 - Funding Information:
This research received partial support from U.S. Department of Energy, Office of Science, under Contract No. DE-AC02-06CH11357. This work was performed, in part, at the Center for Nanoscale Materials, a U.S. Department of Energy Office of Science User Facility. We thank X. Miao of NJIT for help with the EDS pictures and a Raman scan.
Funding Information:
TaEnMd Yan.La;lyLs.iSsatonodl ;AD..SG..,coLn.Otr.ibauntdedB .Fo.xciodnetrainbdu tgedraopphteincael faanbdriecaletciotrnontoicolasn,arleysspisecttoiovlesl;yH; Y.G.L.acnoanlytrziebduttehde dTaEtMa analysis tool; D.G L.O and BF contributed optical and electronic analysis tools; H.G. analyzed the data with assistance from L.S. and Y.L; H.G. wrote the paper with assistance from L.S, A.S and B.F. All authors contributed Ftou nddisicnugs:sTiohnissraensdea trhceh prercoedivuecdtiopna rotfia tlhseumppaonrutsfcrorimptU. .S.DepartmentofEnergy,OfficeofScience,underContract No. DE-AC02-06CH11357. Funding: This research received partial support from U.S. Department of Energy, Office of Science, under Acknowledgments: This work was performed, in part, at the Center for Nanoscale Materials, a U.S. Department of Contract No. DE-AC02-06CH11357. Energy Office of Science User Facility. We thank X. Miao of NJIT for help with the EDS pictures and a Raman scan. Acknowledgments: This work was performed, in part, at the Center for Nanoscale Materials, a U.S. Department of Energy Office of Science User Facility. We thank X. Miao of NJIT for help with the EDS pictures and a Raman scan. References Conflicts of Interest: The authors declare no conflicts of interest. 1. Suk, J.W.; Kitt, A.; Magnuson, C.W.; Hao, Y.; Ahmed, S.; An, J.; Swan, A.K.; Goldberg, B.B.; Ruoff, R.S.
Publisher Copyright:
© 2018 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2018/12
Y1 - 2018/12
N2 - Transfer of graphene, grown by chemical vapor deposition (CVD), to a substrate of choice, typically involves the deposition of a polymeric layer (for example, poly(methyl methacrylate) (PMMA), or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. One method to improve the graphene transfer is to coat the graphene with a thin protective oxide layer, followed by the deposition of a very thin polymer layer on top of the oxide layer (much thinner than the usual thickness), followed by a more aggressive polymeric removal method, thus leaving the graphene intact. At the same time, having an oxide layer on graphene may serve applications, such as channeled transistors or sensing devices. Here, we study the transfer of graphene with a protective thin oxide layer grown by atomic layer deposition (ALD). We follow the transfer process from the graphene growth stage through oxide deposition until completion. We report on the nucleation growth process of oxides on graphene, their resultant strain and their optical transmission.
AB - Transfer of graphene, grown by chemical vapor deposition (CVD), to a substrate of choice, typically involves the deposition of a polymeric layer (for example, poly(methyl methacrylate) (PMMA), or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. One method to improve the graphene transfer is to coat the graphene with a thin protective oxide layer, followed by the deposition of a very thin polymer layer on top of the oxide layer (much thinner than the usual thickness), followed by a more aggressive polymeric removal method, thus leaving the graphene intact. At the same time, having an oxide layer on graphene may serve applications, such as channeled transistors or sensing devices. Here, we study the transfer of graphene with a protective thin oxide layer grown by atomic layer deposition (ALD). We follow the transfer process from the graphene growth stage through oxide deposition until completion. We report on the nucleation growth process of oxides on graphene, their resultant strain and their optical transmission.
KW - Atomic layer deposition (ALD)
KW - Oxide layer deposition on graphene
KW - Raman spectroscopy of graphene
KW - Thin oxide films
KW - Transfer of graphene
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U2 - 10.3390/chemengineering2040058
DO - 10.3390/chemengineering2040058
M3 - Article
AN - SCOPUS:85089854747
SN - 2305-7084
VL - 2
SP - 1
EP - 11
JO - ChemEngineering
JF - ChemEngineering
IS - 4
M1 - 58
ER -