Transient enhanced diffusion from implantation of molecular decaborane ions

Aditya Agarwal; H. J. Gossmann; D. C. Jacobson; D. J. Eaglesham; M. Sosnowski; J. M. Poate; I. Yamada; J. Matsuo; T. E. Haynes

Transient enhanced diffusion from implantation of molecular decaborane ions

Aditya Agarwal, H. J. Gossmann, D. C. Jacobson, D. J. Eaglesham, M. Sosnowski, J. M. Poate, I. Yamada, J. Matsuo, T. E. Haynes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

The transient enhanced diffusion (TED) from implantation of 5-keV B₁₀H₁₄ and 0.5-keV B ions has been quantified and compared at nominal boron doses of 10¹⁴ and 10¹⁵ cm^-2. The B diffusivity during annealing was extracted from SIMS of marker layers in boron doping-superlattices and the actual B dose implanted was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. TEM analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal B dose of 10¹⁵ cm^-2. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancements on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms which can become substitutional in the silicon lattice. Accordingly, no contribution to TED is expected from the hydrogen in the B₁₀H₁₄ ions and none is observed. Furthermore, there is no detectable effect in the diffusion provides which can be attributed to a difference in the ion-damage produced by the decaborane molecule and the boron atom. In both cases the reduction in diffusivity enhancement is due only to proximity of the implantation-induced excess interstitials to the wafer surface.

Original language	English (US)
Title of host publication	Proceedings of the International Conference on Ion Implantation Technology
Publisher	IEEE
Pages	857-860
Number of pages	4
ISBN (Print)	078034538X
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) - Kyoto, Jpn Duration: Jun 22 1998 → Jun 26 1998

Publication series

Name	Proceedings of the International Conference on Ion Implantation Technology
Volume	2

Other

Other	Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
City	Kyoto, Jpn
Period	6/22/98 → 6/26/98

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

Agarwal, A., Gossmann, H. J., Jacobson, D. C., Eaglesham, D. J., Sosnowski, M., Poate, J. M., Yamada, I., Matsuo, J., & Haynes, T. E. (1999). Transient enhanced diffusion from implantation of molecular decaborane ions. In Proceedings of the International Conference on Ion Implantation Technology (pp. 857-860). (Proceedings of the International Conference on Ion Implantation Technology; Vol. 2). IEEE.

@inproceedings{e2b3178515604776891e018c578a77a3,

title = "Transient enhanced diffusion from implantation of molecular decaborane ions",

abstract = "The transient enhanced diffusion (TED) from implantation of 5-keV B10H14 and 0.5-keV B ions has been quantified and compared at nominal boron doses of 1014 and 1015 cm-2. The B diffusivity during annealing was extracted from SIMS of marker layers in boron doping-superlattices and the actual B dose implanted was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. TEM analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal B dose of 1015 cm-2. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancements on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms which can become substitutional in the silicon lattice. Accordingly, no contribution to TED is expected from the hydrogen in the B10H14 ions and none is observed. Furthermore, there is no detectable effect in the diffusion provides which can be attributed to a difference in the ion-damage produced by the decaborane molecule and the boron atom. In both cases the reduction in diffusivity enhancement is due only to proximity of the implantation-induced excess interstitials to the wafer surface.",

author = "Aditya Agarwal and Gossmann, {H. J.} and Jacobson, {D. C.} and Eaglesham, {D. J.} and M. Sosnowski and Poate, {J. M.} and I. Yamada and J. Matsuo and Haynes, {T. E.}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) ; Conference date: 22-06-1998 Through 26-06-1998",

year = "1999",

language = "English (US)",

isbn = "078034538X",

series = "Proceedings of the International Conference on Ion Implantation Technology",

publisher = "IEEE",

pages = "857--860",

booktitle = "Proceedings of the International Conference on Ion Implantation Technology",

}

Agarwal, A, Gossmann, HJ, Jacobson, DC, Eaglesham, DJ, Sosnowski, M, Poate, JM, Yamada, I, Matsuo, J & Haynes, TE 1999, Transient enhanced diffusion from implantation of molecular decaborane ions. in Proceedings of the International Conference on Ion Implantation Technology. Proceedings of the International Conference on Ion Implantation Technology, vol. 2, IEEE, pp. 857-860, Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98), Kyoto, Jpn, 6/22/98.

Transient enhanced diffusion from implantation of molecular decaborane ions. / Agarwal, Aditya; Gossmann, H. J.; Jacobson, D. C. et al.
Proceedings of the International Conference on Ion Implantation Technology. IEEE, 1999. p. 857-860 (Proceedings of the International Conference on Ion Implantation Technology; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Transient enhanced diffusion from implantation of molecular decaborane ions

AU - Agarwal, Aditya

AU - Gossmann, H. J.

AU - Jacobson, D. C.

AU - Eaglesham, D. J.

AU - Sosnowski, M.

AU - Poate, J. M.

AU - Yamada, I.

AU - Matsuo, J.

AU - Haynes, T. E.

PY - 1999

Y1 - 1999

N2 - The transient enhanced diffusion (TED) from implantation of 5-keV B10H14 and 0.5-keV B ions has been quantified and compared at nominal boron doses of 1014 and 1015 cm-2. The B diffusivity during annealing was extracted from SIMS of marker layers in boron doping-superlattices and the actual B dose implanted was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. TEM analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal B dose of 1015 cm-2. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancements on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms which can become substitutional in the silicon lattice. Accordingly, no contribution to TED is expected from the hydrogen in the B10H14 ions and none is observed. Furthermore, there is no detectable effect in the diffusion provides which can be attributed to a difference in the ion-damage produced by the decaborane molecule and the boron atom. In both cases the reduction in diffusivity enhancement is due only to proximity of the implantation-induced excess interstitials to the wafer surface.

AB - The transient enhanced diffusion (TED) from implantation of 5-keV B10H14 and 0.5-keV B ions has been quantified and compared at nominal boron doses of 1014 and 1015 cm-2. The B diffusivity during annealing was extracted from SIMS of marker layers in boron doping-superlattices and the actual B dose implanted was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. TEM analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal B dose of 1015 cm-2. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancements on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms which can become substitutional in the silicon lattice. Accordingly, no contribution to TED is expected from the hydrogen in the B10H14 ions and none is observed. Furthermore, there is no detectable effect in the diffusion provides which can be attributed to a difference in the ion-damage produced by the decaborane molecule and the boron atom. In both cases the reduction in diffusivity enhancement is due only to proximity of the implantation-induced excess interstitials to the wafer surface.

UR - http://www.scopus.com/inward/record.url?scp=0033354447&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033354447&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0033354447

SN - 078034538X

T3 - Proceedings of the International Conference on Ion Implantation Technology

SP - 857

EP - 860

BT - Proceedings of the International Conference on Ion Implantation Technology

PB - IEEE

T2 - Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)

Y2 - 22 June 1998 through 26 June 1998

ER -

Transient enhanced diffusion from implantation of molecular decaborane ions

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