Transient-enhanced diffusion in shallow-junction formation

Anthony T. Fiory, S. G. Chawda, S. Madishetty, V. R. Mehta, N. M. Ravindra, S. P. McCoy, M. E. Lefrançois, K. K. Bourdelle, J. M. McKinley, H. J.L. Gossmann, A. Agarwal

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Shallow junctions are formed in crystalline Si by low-energy ion implantation of B+, P+, or As+ species accompanied by electrical activation of dopants by rapid thermal annealing and the special case of spike annealing. Diffusion depths were determined by secondary ion-mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse-bias diode-leakage measurements. The B+ and P+ species exhibit transient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction of implanted dopants depends mainly on the temperature for B+ species, while for P+ species, it depends on both temperature and P+ dose. The relatively small amount of diffusion associated with As+ implants is favorable for shallow-junction formation with spike annealing.

Original languageEnglish (US)
Pages (from-to)999-1003
Number of pages5
JournalJournal of Electronic Materials
Volume31
DOIs
StatePublished - Oct 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Electrical activation
  • Ion implantation
  • Spike annealing

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