Transient-enhanced diffusion in shallow-junction formation

Anthony T. Fiory; S. G. Chawda; S. Madishetty; V. R. Mehta; N. M. Ravindra; S. P. McCoy; M. E. Lefrançois; K. K. Bourdelle; J. M. McKinley; H. J.L. Gossmann; A. Agarwal

doi:10.1007/s11664-002-0034-6

Transient-enhanced diffusion in shallow-junction formation

Anthony T. Fiory, S. G. Chawda, S. Madishetty, V. R. Mehta, N. M. Ravindra, S. P. McCoy, M. E. Lefrançois, K. K. Bourdelle, J. M. McKinley, H. J.L. Gossmann, A. Agarwal

Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Shallow junctions are formed in crystalline Si by low-energy ion implantation of B⁺, P⁺, or As⁺ species accompanied by electrical activation of dopants by rapid thermal annealing and the special case of spike annealing. Diffusion depths were determined by secondary ion-mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse-bias diode-leakage measurements. The B⁺ and P⁺ species exhibit transient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction of implanted dopants depends mainly on the temperature for B⁺ species, while for P⁺ species, it depends on both temperature and P⁺ dose. The relatively small amount of diffusion associated with As⁺ implants is favorable for shallow-junction formation with spike annealing.

Original language	English (US)
Pages (from-to)	999-1003
Number of pages	5
Journal	Journal of Electronic Materials
Volume	31
DOIs	https://doi.org/10.1007/s11664-002-0034-6
State	Published - Oct 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Keywords

Electrical activation
Ion implantation
Spike annealing

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10.1007/s11664-002-0034-6

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@article{20a5b3bb876b47a5b967187b1b3c6746,

title = "Transient-enhanced diffusion in shallow-junction formation",

abstract = "Shallow junctions are formed in crystalline Si by low-energy ion implantation of B+, P+, or As+ species accompanied by electrical activation of dopants by rapid thermal annealing and the special case of spike annealing. Diffusion depths were determined by secondary ion-mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse-bias diode-leakage measurements. The B+ and P+ species exhibit transient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction of implanted dopants depends mainly on the temperature for B+ species, while for P+ species, it depends on both temperature and P+ dose. The relatively small amount of diffusion associated with As+ implants is favorable for shallow-junction formation with spike annealing.",

keywords = "Electrical activation, Ion implantation, Spike annealing",

author = "Fiory, {Anthony T.} and Chawda, {S. G.} and S. Madishetty and Mehta, {V. R.} and Ravindra, {N. M.} and McCoy, {S. P.} and Lefran{\c c}ois, {M. E.} and Bourdelle, {K. K.} and McKinley, {J. M.} and Gossmann, {H. J.L.} and A. Agarwal",

year = "2002",

month = oct,

doi = "10.1007/s11664-002-0034-6",

language = "English (US)",

volume = "31",

pages = "999--1003",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

}

TY - JOUR

T1 - Transient-enhanced diffusion in shallow-junction formation

AU - Fiory, Anthony T.

AU - Chawda, S. G.

AU - Madishetty, S.

AU - Mehta, V. R.

AU - Ravindra, N. M.

AU - McCoy, S. P.

AU - Lefrançois, M. E.

AU - Bourdelle, K. K.

AU - McKinley, J. M.

AU - Gossmann, H. J.L.

AU - Agarwal, A.

PY - 2002/10

Y1 - 2002/10

N2 - Shallow junctions are formed in crystalline Si by low-energy ion implantation of B+, P+, or As+ species accompanied by electrical activation of dopants by rapid thermal annealing and the special case of spike annealing. Diffusion depths were determined by secondary ion-mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse-bias diode-leakage measurements. The B+ and P+ species exhibit transient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction of implanted dopants depends mainly on the temperature for B+ species, while for P+ species, it depends on both temperature and P+ dose. The relatively small amount of diffusion associated with As+ implants is favorable for shallow-junction formation with spike annealing.

AB - Shallow junctions are formed in crystalline Si by low-energy ion implantation of B+, P+, or As+ species accompanied by electrical activation of dopants by rapid thermal annealing and the special case of spike annealing. Diffusion depths were determined by secondary ion-mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse-bias diode-leakage measurements. The B+ and P+ species exhibit transient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction of implanted dopants depends mainly on the temperature for B+ species, while for P+ species, it depends on both temperature and P+ dose. The relatively small amount of diffusion associated with As+ implants is favorable for shallow-junction formation with spike annealing.

KW - Electrical activation

KW - Ion implantation

KW - Spike annealing

UR - http://www.scopus.com/inward/record.url?scp=0036809275&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036809275&partnerID=8YFLogxK

U2 - 10.1007/s11664-002-0034-6

DO - 10.1007/s11664-002-0034-6

M3 - Article

AN - SCOPUS:0036809275

SN - 0361-5235

VL - 31

SP - 999

EP - 1003

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

ER -

Transient-enhanced diffusion in shallow-junction formation

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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