Transient enhanced diffusion of B in Si implanted with decaborane cluster ions

Marek Sosnowski, Maria A. Albano, Cheng Li, Hans Joachim L. Gossmann, Dale C. Jacobson

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3 Scopus citations


Cluster ions, obtained by ionization of decaborane (B10H14) vapor are considered for implantation of B into Si to form very shallow junctions required for the next generations of metal oxide semiconductor devices. While shallow B implantation can thus be achieved with relatively large implantation energies, the final junction depth is also defined by diffusion during annealing, particularly by transient enhanced diffusion (TED). TED of B in Si implanted with mass analyzed B10Hx+ cluster ions at energies of 2, 5, and 12 ke V is compared with TED from 1.2 keV B+ ions. No difference was found between TED of B implanted in Si with the cluster and the monomer ions of the equivalent energy and dose.

Original languageEnglish (US)
Pages (from-to)G474-G476
JournalJournal of the Electrochemical Society
Issue number8
StatePublished - Aug 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment


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