Transient enhanced diffusion of B in Si implanted with decaborane cluster ions

Marek Sosnowski; Maria A. Albano; Cheng Li; Hans Joachim L. Gossmann; Dale C. Jacobson

doi:10.1149/1.1486453

Transient enhanced diffusion of B in Si implanted with decaborane cluster ions

Marek Sosnowski, Maria A. Albano, Cheng Li, Hans Joachim L. Gossmann, Dale C. Jacobson

Electrical and Computer Engineering

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Abstract

Cluster ions, obtained by ionization of decaborane (B₁₀H₁₄) vapor are considered for implantation of B into Si to form very shallow junctions required for the next generations of metal oxide semiconductor devices. While shallow B implantation can thus be achieved with relatively large implantation energies, the final junction depth is also defined by diffusion during annealing, particularly by transient enhanced diffusion (TED). TED of B in Si implanted with mass analyzed B₁₀H_x⁺ cluster ions at energies of 2, 5, and 12 ke V is compared with TED from 1.2 keV B⁺ ions. No difference was found between TED of B implanted in Si with the cluster and the monomer ions of the equivalent energy and dose.

Original language	English (US)
Pages (from-to)	G474-G476
Journal	Journal of the Electrochemical Society
Volume	149
Issue number	8
DOIs	https://doi.org/10.1149/1.1486453
State	Published - Aug 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

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@article{80362b38ba1c47ac958ec29f5b54f0cd,

title = "Transient enhanced diffusion of B in Si implanted with decaborane cluster ions",

abstract = "Cluster ions, obtained by ionization of decaborane (B10H14) vapor are considered for implantation of B into Si to form very shallow junctions required for the next generations of metal oxide semiconductor devices. While shallow B implantation can thus be achieved with relatively large implantation energies, the final junction depth is also defined by diffusion during annealing, particularly by transient enhanced diffusion (TED). TED of B in Si implanted with mass analyzed B10Hx+ cluster ions at energies of 2, 5, and 12 ke V is compared with TED from 1.2 keV B+ ions. No difference was found between TED of B implanted in Si with the cluster and the monomer ions of the equivalent energy and dose.",

author = "Marek Sosnowski and Albano, {Maria A.} and Cheng Li and Gossmann, {Hans Joachim L.} and Jacobson, {Dale C.}",

year = "2002",

month = aug,

doi = "10.1149/1.1486453",

language = "English (US)",

volume = "149",

pages = "G474--G476",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Transient enhanced diffusion of B in Si implanted with decaborane cluster ions

AU - Sosnowski, Marek

AU - Albano, Maria A.

AU - Li, Cheng

AU - Gossmann, Hans Joachim L.

AU - Jacobson, Dale C.

PY - 2002/8

Y1 - 2002/8

N2 - Cluster ions, obtained by ionization of decaborane (B10H14) vapor are considered for implantation of B into Si to form very shallow junctions required for the next generations of metal oxide semiconductor devices. While shallow B implantation can thus be achieved with relatively large implantation energies, the final junction depth is also defined by diffusion during annealing, particularly by transient enhanced diffusion (TED). TED of B in Si implanted with mass analyzed B10Hx+ cluster ions at energies of 2, 5, and 12 ke V is compared with TED from 1.2 keV B+ ions. No difference was found between TED of B implanted in Si with the cluster and the monomer ions of the equivalent energy and dose.

AB - Cluster ions, obtained by ionization of decaborane (B10H14) vapor are considered for implantation of B into Si to form very shallow junctions required for the next generations of metal oxide semiconductor devices. While shallow B implantation can thus be achieved with relatively large implantation energies, the final junction depth is also defined by diffusion during annealing, particularly by transient enhanced diffusion (TED). TED of B in Si implanted with mass analyzed B10Hx+ cluster ions at energies of 2, 5, and 12 ke V is compared with TED from 1.2 keV B+ ions. No difference was found between TED of B implanted in Si with the cluster and the monomer ions of the equivalent energy and dose.

UR - http://www.scopus.com/inward/record.url?scp=0036687218&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036687218&partnerID=8YFLogxK

U2 - 10.1149/1.1486453

DO - 10.1149/1.1486453

M3 - Article

AN - SCOPUS:0036687218

SN - 0013-4651

VL - 149

SP - G474-G476

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 8

ER -

Transient enhanced diffusion of B in Si implanted with decaborane cluster ions

Abstract

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