Transient sensitivity of sectorial split-drain magnetic field-effect transistor

Zhenyi Yang; Sik Lam Siu; Wing Shan Tam; Chi Wah Kok; Chi Wah Leung; P. T. Lai; Hei Wong; P. W.T. Pong

doi:10.1109/TMAG.2013.2241034

Transient sensitivity of sectorial split-drain magnetic field-effect transistor

Zhenyi Yang, Sik Lam Siu, Wing Shan Tam, Chi Wah Kok, Chi Wah Leung, P. T. Lai, Hei Wong, P. W.T. Pong

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

This paper proposed an analytical model on the geometric dependence of the transient sensitivity and transient sensing hysteresis of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). We also conjectured that the transient sensing hysteresis is caused by the charge trapped on channel boundary, and is also geometric dependent. Experimental results are presented which show good consistence with the analytical derivation. The derived analytical model and experimental results can be used as a design guideline for the optimization and trade-off of the transient sensitivity and transient sensing hysteresis of the sectorial SD-MAGFETs.

Original language	English (US)
Article number	6559182
Pages (from-to)	4048-4051
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	49
Issue number	7
DOIs	https://doi.org/10.1109/TMAG.2013.2241034
State	Published - 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Hysteresis
magnetic field-effect transistor (MAGFET)
sectorial
sensitivity
split-drain
transient sensitivity

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10.1109/TMAG.2013.2241034

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title = "Transient sensitivity of sectorial split-drain magnetic field-effect transistor",

abstract = "This paper proposed an analytical model on the geometric dependence of the transient sensitivity and transient sensing hysteresis of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). We also conjectured that the transient sensing hysteresis is caused by the charge trapped on channel boundary, and is also geometric dependent. Experimental results are presented which show good consistence with the analytical derivation. The derived analytical model and experimental results can be used as a design guideline for the optimization and trade-off of the transient sensitivity and transient sensing hysteresis of the sectorial SD-MAGFETs.",

keywords = "Hysteresis, magnetic field-effect transistor (MAGFET), sectorial, sensitivity, split-drain, transient sensitivity",

author = "Zhenyi Yang and Siu, {Sik Lam} and Tam, {Wing Shan} and Kok, {Chi Wah} and Leung, {Chi Wah} and Lai, {P. T.} and Hei Wong and Pong, {P. W.T.}",

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TY - JOUR

T1 - Transient sensitivity of sectorial split-drain magnetic field-effect transistor

AU - Yang, Zhenyi

AU - Siu, Sik Lam

AU - Tam, Wing Shan

AU - Kok, Chi Wah

AU - Leung, Chi Wah

AU - Lai, P. T.

AU - Wong, Hei

AU - Pong, P. W.T.

PY - 2013

Y1 - 2013

N2 - This paper proposed an analytical model on the geometric dependence of the transient sensitivity and transient sensing hysteresis of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). We also conjectured that the transient sensing hysteresis is caused by the charge trapped on channel boundary, and is also geometric dependent. Experimental results are presented which show good consistence with the analytical derivation. The derived analytical model and experimental results can be used as a design guideline for the optimization and trade-off of the transient sensitivity and transient sensing hysteresis of the sectorial SD-MAGFETs.

AB - This paper proposed an analytical model on the geometric dependence of the transient sensitivity and transient sensing hysteresis of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). We also conjectured that the transient sensing hysteresis is caused by the charge trapped on channel boundary, and is also geometric dependent. Experimental results are presented which show good consistence with the analytical derivation. The derived analytical model and experimental results can be used as a design guideline for the optimization and trade-off of the transient sensitivity and transient sensing hysteresis of the sectorial SD-MAGFETs.

KW - Hysteresis

KW - magnetic field-effect transistor (MAGFET)

KW - sectorial

KW - sensitivity

KW - split-drain

KW - transient sensitivity

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Transient sensitivity of sectorial split-drain magnetic field-effect transistor

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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