Transition Gibbs free energy level cross section and formulation of carrier SRH recombination rate

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Abstract

The transition among multiple charging states of a semiconductor's localized intrinsic/impurity defects is considered as phase transitions, and the concept of transition Gibbs free energy level (TGFEL) is proposed. Dependence of the cross section of TGFEL on its charge state is discussed. Introduction of TGFEL to replace activation energy has fundamentally important consequences for semiconductor physics and devices. TGFEL involves entropy. What is to be included and not included in the entropy term consistently for all defect levels is an unresolved open question, related to correct interpretation of various experimental data associated with various defect levels. This work is a first step towards resolving this question.

Original languageEnglish (US)
Article number122001
JournalJournal of Semiconductors
Volume34
Issue number12
DOIs
StatePublished - Dec 1 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Shockley-Read-Hall
  • single level defects
  • transition Gibbs free energy level

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