Transparent conducting films grown by pulsed laser deposition

Julia M. Phillips, R. J. Cava, S. Y. Hou, J. J. Krajewski, J. Kwo, J. H. Marshall, W. F. Peck, D. H. Rapkine, G. A. Thomas, R. B. Van Dover

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


We have studied the properties of two types of transparent conducting oxides grown by pulsed laser deposition (PLD) on quartz substrates. We have grown films of ITO with resistivity as low as 250 μΩ-cm and with absorption coefficient < 600 cm-1 throughout the visible spectrum. Even films deposited at room temperature can have P < 500 μΩ-cm, although the optical transmission characteristics are worse than those of commercially available ITO. Important parameters governing film quality include the oxygen partial pressure during film deposition and substrate temperature. GaInO3 is a recently identified transparent conducting material which is structurally distinct from ITO. Films have been grown with no intentional dopants and with either Ge substitution for Ga or Sn substitution for In. Doping concentrations as high as 10 at. % have been studied. There is no evidence for dopant segregation. Films with resistivities as low as 3 mΩ-cm have been achieved, and the absorption coefficient can be less than 500 cm-1 throughout the entire visible spectrum.

Original languageEnglish (US)
Pages (from-to)255-260
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 5 1994Apr 6 1994

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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