Transparent conducting films of GaInO3 by sputtering

J. Kwo; S. A. Carter; R. J. Cava; S. Y. Hou; J. M. Phillips; D. H. Rapkine; G. A. Thomas; R. B. van Dover

doi:10.1557/proc-345-241

Transparent conducting films of GaInO₃ by sputtering

J. Kwo, S. A. Carter, R. J. Cava, S. Y. Hou, J. M. Phillips, D. H. Rapkine, G. A. Thomas, R. B. van Dover

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A new candidate for the transparent conductor, GaInO₃, shows promise of improved optical transmission in the blue wavelength over ITO due to a high band gap approx.3.3 eV. Thin films of GaInO₃ with cation dopants Ge for Ga, and Sn for In, respectively, have been prepared using dc reactive magnetron sputtering. Oxygen partial pressure significantly affects the film quality. A post-anneal in H₂-rich atmosphere at 300°C reduced the oxygen content and lowered the resistivity to approx.3.0 mΩ-cm; the final resistivity however appears to be insensitive to cation dopant concentrations. The optical transmission of this new material is indeed superior to ITO over the entire visible spectrum, especially in the green and blue wavelengths.

Original language	English (US)
Pages (from-to)	241-246
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	345
DOIs	https://doi.org/10.1557/proc-345-241
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 5 1994 → Apr 6 1994

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{562649fbb5db47b4ac2be78d8d844fba,

title = "Transparent conducting films of GaInO3 by sputtering",

abstract = "A new candidate for the transparent conductor, GaInO3, shows promise of improved optical transmission in the blue wavelength over ITO due to a high band gap approx.3.3 eV. Thin films of GaInO3 with cation dopants Ge for Ga, and Sn for In, respectively, have been prepared using dc reactive magnetron sputtering. Oxygen partial pressure significantly affects the film quality. A post-anneal in H2-rich atmosphere at 300°C reduced the oxygen content and lowered the resistivity to approx.3.0 mΩ-cm; the final resistivity however appears to be insensitive to cation dopant concentrations. The optical transmission of this new material is indeed superior to ITO over the entire visible spectrum, especially in the green and blue wavelengths.",

author = "J. Kwo and Carter, {S. A.} and Cava, {R. J.} and Hou, {S. Y.} and Phillips, {J. M.} and Rapkine, {D. H.} and Thomas, {G. A.} and {van Dover}, {R. B.}",

year = "1994",

doi = "10.1557/proc-345-241",

language = "English (US)",

volume = "345",

pages = "241--246",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Transparent conducting films of GaInO3 by sputtering

AU - Kwo, J.

AU - Carter, S. A.

AU - Cava, R. J.

AU - Hou, S. Y.

AU - Phillips, J. M.

AU - Rapkine, D. H.

AU - Thomas, G. A.

AU - van Dover, R. B.

PY - 1994

Y1 - 1994

N2 - A new candidate for the transparent conductor, GaInO3, shows promise of improved optical transmission in the blue wavelength over ITO due to a high band gap approx.3.3 eV. Thin films of GaInO3 with cation dopants Ge for Ga, and Sn for In, respectively, have been prepared using dc reactive magnetron sputtering. Oxygen partial pressure significantly affects the film quality. A post-anneal in H2-rich atmosphere at 300°C reduced the oxygen content and lowered the resistivity to approx.3.0 mΩ-cm; the final resistivity however appears to be insensitive to cation dopant concentrations. The optical transmission of this new material is indeed superior to ITO over the entire visible spectrum, especially in the green and blue wavelengths.

AB - A new candidate for the transparent conductor, GaInO3, shows promise of improved optical transmission in the blue wavelength over ITO due to a high band gap approx.3.3 eV. Thin films of GaInO3 with cation dopants Ge for Ga, and Sn for In, respectively, have been prepared using dc reactive magnetron sputtering. Oxygen partial pressure significantly affects the film quality. A post-anneal in H2-rich atmosphere at 300°C reduced the oxygen content and lowered the resistivity to approx.3.0 mΩ-cm; the final resistivity however appears to be insensitive to cation dopant concentrations. The optical transmission of this new material is indeed superior to ITO over the entire visible spectrum, especially in the green and blue wavelengths.

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DO - 10.1557/proc-345-241

M3 - Conference article

AN - SCOPUS:0028740815

SN - 0272-9172

VL - 345

SP - 241

EP - 246

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 5 April 1994 through 6 April 1994

ER -

Transparent conducting films of GaInO₃ by sputtering

Abstract

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