Trapping and detrapping of H in Si: Impact on diffusion properties and solar cell processing

Bhushan Sopori; Y. Zhang; R. Reedy; K. Jones; N. M. Ravindra; S. Rangan; S. Ashok

doi:10.1557/proc-719-f5.3

Trapping and detrapping of H in Si: Impact on diffusion properties and solar cell processing

Bhushan Sopori, Y. Zhang, R. Reedy, K. Jones, N. M. Ravindra, S. Rangan, S. Ashok

Physics

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

Influence of trapping and detrapping on the diffusion behavior of H in Si is investigated using both experiment and theory. Experimental H (or D) diffusion profiles, produced by plasma and ion implantation processes, are fitted with a theoretical model. This model includes three kinds of traps - stationary, process-induced, and mobile. Excellent correlation between theory and experiment is observed. Best-fit parameters provide an insight into the trapping mechanisms. We also show how some of the problems resulting from trapping can be circumvented by suitable process conditions.

Original language	English (US)
Pages (from-to)	125-131
Number of pages	7
Journal	Materials Research Society Symposium - Proceedings
Volume	719
DOIs	https://doi.org/10.1557/proc-719-f5.3
State	Published - 2002
Event	Defect and Impunity Engineered Semiconductors and Devices III - San Francisco, CA, United States Duration: Apr 1 2002 → Apr 5 2002

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{7de26e6f82e141c99012fd107b018949,

title = "Trapping and detrapping of H in Si: Impact on diffusion properties and solar cell processing",

abstract = "Influence of trapping and detrapping on the diffusion behavior of H in Si is investigated using both experiment and theory. Experimental H (or D) diffusion profiles, produced by plasma and ion implantation processes, are fitted with a theoretical model. This model includes three kinds of traps - stationary, process-induced, and mobile. Excellent correlation between theory and experiment is observed. Best-fit parameters provide an insight into the trapping mechanisms. We also show how some of the problems resulting from trapping can be circumvented by suitable process conditions.",

author = "Bhushan Sopori and Y. Zhang and R. Reedy and K. Jones and Ravindra, {N. M.} and S. Rangan and S. Ashok",

year = "2002",

doi = "10.1557/proc-719-f5.3",

language = "English (US)",

volume = "719",

pages = "125--131",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Defect and Impunity Engineered Semiconductors and Devices III ; Conference date: 01-04-2002 Through 05-04-2002",

}

TY - JOUR

T1 - Trapping and detrapping of H in Si

T2 - Defect and Impunity Engineered Semiconductors and Devices III

AU - Sopori, Bhushan

AU - Zhang, Y.

AU - Reedy, R.

AU - Jones, K.

AU - Ravindra, N. M.

AU - Rangan, S.

AU - Ashok, S.

PY - 2002

Y1 - 2002

N2 - Influence of trapping and detrapping on the diffusion behavior of H in Si is investigated using both experiment and theory. Experimental H (or D) diffusion profiles, produced by plasma and ion implantation processes, are fitted with a theoretical model. This model includes three kinds of traps - stationary, process-induced, and mobile. Excellent correlation between theory and experiment is observed. Best-fit parameters provide an insight into the trapping mechanisms. We also show how some of the problems resulting from trapping can be circumvented by suitable process conditions.

AB - Influence of trapping and detrapping on the diffusion behavior of H in Si is investigated using both experiment and theory. Experimental H (or D) diffusion profiles, produced by plasma and ion implantation processes, are fitted with a theoretical model. This model includes three kinds of traps - stationary, process-induced, and mobile. Excellent correlation between theory and experiment is observed. Best-fit parameters provide an insight into the trapping mechanisms. We also show how some of the problems resulting from trapping can be circumvented by suitable process conditions.

UR - http://www.scopus.com/inward/record.url?scp=0036447879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036447879&partnerID=8YFLogxK

U2 - 10.1557/proc-719-f5.3

DO - 10.1557/proc-719-f5.3

M3 - Conference article

AN - SCOPUS:0036447879

SN - 0272-9172

VL - 719

SP - 125

EP - 131

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 1 April 2002 through 5 April 2002

ER -

Trapping and detrapping of H in Si: Impact on diffusion properties and solar cell processing

Abstract

All Science Journal Classification (ASJC) codes

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