Trapping and detrapping of H in Si: Impact on diffusion properties and solar cell processing

Bhushan Sopori, Y. Zhang, R. Reedy, K. Jones, N. M. Ravindra, S. Rangan, S. Ashok

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations


Influence of trapping and detrapping on the diffusion behavior of H in Si is investigated using both experiment and theory. Experimental H (or D) diffusion profiles, produced by plasma and ion implantation processes, are fitted with a theoretical model. This model includes three kinds of traps - stationary, process-induced, and mobile. Excellent correlation between theory and experiment is observed. Best-fit parameters provide an insight into the trapping mechanisms. We also show how some of the problems resulting from trapping can be circumvented by suitable process conditions.

Original languageEnglish (US)
Pages (from-to)125-131
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2002
EventDefect and Impunity Engineered Semiconductors and Devices III - San Francisco, CA, United States
Duration: Apr 1 2002Apr 5 2002

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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