Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks

Keyphrases

• Bulk Defects 50%
• Deep Level Defects 100%
• Electron Traps 50%
• Flat-band Voltage 50%
• Gate Stack 100%
• Hf-silicate 100%
• Highest Layer 50%
• Hot Electron Stress 100%
• Leakage Current 50%
• MOS Capacitor 50%
• MOS Devices 50%
• N-channel 50%
• Negative-U 50%
• O Vacancy 100%
• Power Law Dependence 50%
• Slow Transient 50%
• Strong Correlation 50%
• Transient Trapping 50%
• Trap-assisted Tunneling 50%
• Vacancy Formation 50%

Material Science

• Capacitor 50%
• Hot Electron 100%
• Silicate 100%