Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire

Renjie Wang, Yong Ho Ra, Yuanpeng Wu, Songrui Zhao, Hieu P.T. Nguyen, Ishiang Shih, Zetian Mi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Scopus citations


The monolithic integration of red, green and blue (RGB) GaN-based light-emitting diodes (LEDs) directly on a single chip is critically important for smart lighting and full color display applications. In this work, RGB InGaN/GaN dot-in-a-wire LED arrays were laterally arranged on a Si wafer using a three-step SiOx-mask selective area growth (SAG) technique, and on a sapphire wafer using a Ti-mask SAG technique. Tunable emission across the entire visible spectral range (∼ 450 nm to 700 nm) can be readily achieved on a single Si wafer by varying the sizes and/or compositions of the dots. By separately biasing lateral-arranged multi-color LED subpixels, the correlated color temperature (CCT) values of such a ∼ 0.016 mm2 pixel can be varied from ∼ 1900 K to 6800 K. The RGB pixel size can be further reduced by using the Ti-mask SAG technique on sapphire wafer. Full-color InGaN/GaN nanowire arrays with sizes of 2.8 × 2.8 μm2 have been monolithically fabricated into the same pixel.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices XI
EditorsYasushi Nanishi, Hiroshi Fujioka, Ulrich T. Schwarz, Jen-Inn Chyi, Hadis Morko�, Jong-In Shim
ISBN (Electronic)9781628419832
StatePublished - 2016
Externally publishedYes
EventGallium Nitride Materials and Devices XI - San Francisco, United States
Duration: Feb 15 2016Feb 18 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherGallium Nitride Materials and Devices XI
Country/TerritoryUnited States
CitySan Francisco

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


  • GaN
  • LED
  • Nanowire
  • display
  • molecular beam epitaxy
  • selective area growth


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