@inproceedings{1f20a630c26a45b38b64ae77dae08ca0,
title = "Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire",
abstract = "The monolithic integration of red, green and blue (RGB) GaN-based light-emitting diodes (LEDs) directly on a single chip is critically important for smart lighting and full color display applications. In this work, RGB InGaN/GaN dot-in-a-wire LED arrays were laterally arranged on a Si wafer using a three-step SiOx-mask selective area growth (SAG) technique, and on a sapphire wafer using a Ti-mask SAG technique. Tunable emission across the entire visible spectral range (∼ 450 nm to 700 nm) can be readily achieved on a single Si wafer by varying the sizes and/or compositions of the dots. By separately biasing lateral-arranged multi-color LED subpixels, the correlated color temperature (CCT) values of such a ∼ 0.016 mm2 pixel can be varied from ∼ 1900 K to 6800 K. The RGB pixel size can be further reduced by using the Ti-mask SAG technique on sapphire wafer. Full-color InGaN/GaN nanowire arrays with sizes of 2.8 × 2.8 μm2 have been monolithically fabricated into the same pixel.",
keywords = "GaN, LED, Nanowire, display, molecular beam epitaxy, selective area growth",
author = "Renjie Wang and Ra, {Yong Ho} and Yuanpeng Wu and Songrui Zhao and Nguyen, {Hieu P.T.} and Ishiang Shih and Zetian Mi",
note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; Gallium Nitride Materials and Devices XI ; Conference date: 15-02-2016 Through 18-02-2016",
year = "2016",
doi = "10.1117/12.2213741",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Yasushi Nanishi and Hiroshi Fujioka and Schwarz, {Ulrich T.} and Jen-Inn Chyi and Hadis Morko� and Jong-In Shim",
booktitle = "Gallium Nitride Materials and Devices XI",
address = "United States",
}