Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes

M. Djavid, H. P.T. Nguyen, S. Zhang, K. Cui, S. Fan, Z. Mi

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We report on the demonstration of InGaN/GaN dot-in-a-wire tunnel injection white-light-emitting diodes on Si, wherein electrons and holes are injected into the quantum dot active region through two separate InGaN injector wells. Significantly reduced electron overflow is realized without the use of any Al-containing electron blocking layer. Moreover, the InGaN hole injector well, which is positioned between the quantum dot active region and p-GaN, can harvest electrons that have escaped through the near-surface region of nanowires.

Original languageEnglish (US)
Article number085009
JournalSemiconductor Science and Technology
Volume29
Issue number8
DOIs
StatePublished - Aug 1 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • GaN
  • light emitting diode
  • nanowire
  • quantum dot
  • tunnel injection

Fingerprint Dive into the research topics of 'Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes'. Together they form a unique fingerprint.

Cite this