Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes

M. Djavid, H. P.T. Nguyen, S. Zhang, K. Cui, S. Fan, Z. Mi

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We report on the demonstration of InGaN/GaN dot-in-a-wire tunnel injection white-light-emitting diodes on Si, wherein electrons and holes are injected into the quantum dot active region through two separate InGaN injector wells. Significantly reduced electron overflow is realized without the use of any Al-containing electron blocking layer. Moreover, the InGaN hole injector well, which is positioned between the quantum dot active region and p-GaN, can harvest electrons that have escaped through the near-surface region of nanowires.

Original languageEnglish (US)
Article number085009
JournalSemiconductor Science and Technology
Issue number8
StatePublished - Aug 1 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


  • GaN
  • light emitting diode
  • nanowire
  • quantum dot
  • tunnel injection


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