TWIN-TUB CMOS II - AN ADVANCED VLSI TECHNOLOGY.

L. C. Parrillo, L. K. Wang, R. L. Field, R. L. field, R. C. Melin, R. A. Levy

Research output: Contribution to journal › Conference article › peer-review

Original language	English (US)
Pages (from-to)	706-709
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1982
Externally published	Yes

All Science Journal Classification (ASJC) codes

@article{bad0f3174a9345dda0fbd7795f1d5352,

title = "TWIN-TUB CMOS II - AN ADVANCED VLSI TECHNOLOGY.",

author = "Parrillo, {L. C.} and Wang, {L. K.} and Field, {R. L.} and field, {R. L.} and Melin, {R. C.} and Levy, {R. A.}",

year = "1982",

language = "English (US)",

pages = "706--709",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - TWIN-TUB CMOS II - AN ADVANCED VLSI TECHNOLOGY.

AU - Parrillo, L. C.

AU - Wang, L. K.

AU - Field, R. L.

AU - field, R. L.

AU - Melin, R. C.

AU - Levy, R. A.

PY - 1982

Y1 - 1982

UR - http://www.scopus.com/inward/record.url?scp=0020247824&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020247824&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0020247824

SN - 0163-1918

SP - 706

EP - 709

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

ER -