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Two-step oxidation processes in silicon
N. M. Ravindra
, Dariush Fathy
, J. Narayan
, J. K. Srivastava
, E. A. Irene
Research output
:
Contribution to journal
›
Article
›
peer-review
13
Scopus citations
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Keyphrases
Oxides
100%
Oxidation Mechanism
100%
Two-step Oxidation
100%
Dielectric Breakdown
66%
Argon
66%
Annealing
66%
Si-SiO2 Interface
66%
Transmission Electron Micrograph
66%
Silicon Dioxide
33%
SiOx
33%
Breakdown Characteristics
33%
Refractive Index
33%
High-temperature Annealing
33%
Protrusion
33%
Non-stoichiometric
33%
Interface Structure
33%
Silicon Dioxide Films
33%
Dielectric Breakdown Strength
33%
Dielectric Strength
33%
Surface Smoothness
33%
High-resolution Transmission Electron
33%
Material Science
Silicon
100%
Oxidation Reaction
100%
Oxide Compound
60%
Electrical Breakdown
60%
Mechanical Strength
40%
Silicon Dioxide
40%
Film
20%
Dielectric Material
20%
Monolayers
20%
Annealing
20%
Refractive Index
20%
Interface Structure
20%
Engineering
Dielectrics
100%
Step Oxidation
100%
Transmissions
66%
Micrograph
66%
High Resolution
33%
Refractive Index
33%
Monolayer
33%
Dielectric Strength
33%
Physics
Electrical Breakdown
100%
Silicon Dioxide
66%
Silica
66%
High Resolution
33%
Refractivity
33%
Dielectrics
33%
Interface Structure
33%