Ultra-low power neuromorphic obstacle detection using a two-dimensional materials-based subthreshold transistor

Keyphrases

• Two Dimensional 100%
• Material-based 100%
• Subthreshold 100%
• Ultra-low Power 100%
• Two Dimensional Materials 100%
• Obstacle Detection 100%
• Transistor 100%
• Neuromorphic 100%
• Spiking Neurons 66%
• Lobula Giant Movement Detector 66%
• Neuron Circuit 66%
• Biomimetic 33%
• High Selectivity 33%
• Energy Efficiency 33%
• Carrier Transport 33%
• Energy Cost 33%
• Spontaneous Excitatory Postsynaptic Current (sEPSC) 33%
• Ultrathin 33%
• Visual System 33%
• Technology Components 33%
• Autonomous Robots 33%
• Signal-to-noise Ratio 33%
• Low Power Operation 33%
• Additive White Gaussian Noise 33%
• Detection Accuracy 33%
• Tunneling Current 33%
• 45 Nm CMOS Technology 33%
• Biological Neuron 33%
• Gate Bias 33%
• Moving Obstacles 33%
• High Energy Efficiency 33%
• Locust 33%
• Collision Avoidance 33%
• Subthreshold Regime 33%
• Thermionic 33%
• Selective Detection 33%
• Contact Barrier 33%
• Low Current 33%
• Post-inhibitory Rebound 33%
• Spike Frequency Adaptation 33%
• Looming 33%
• Operational Capabilities 33%
• Barrier Tunneling 33%
• Dual-gate Transistors 33%
• Drain Bias 33%
• Tunable Power 33%
• Reconfigurable 33%
• Neuronal Behavior 33%
• CMOS-based 33%
• Timely Detection 33%
• Spiking Behavior 33%
• Dynamic Visual 33%

Material Science

• Electronic Circuit 100%
• Transistor 100%
• Two-Dimensional Material 100%
• Carrier Transport 33%
• Signal-to-Noise Ratio 33%