Ultrahigh-efficiency phosphor-free InGaN/GaN nanowire white light-emitting diodes on silicon

Z. Mi; H. P.T. Nguyen; S. Zhang; M. Djavid

doi:10.1109/IPCon.2012.6358676

Ultrahigh-efficiency phosphor-free InGaN/GaN nanowire white light-emitting diodes on silicon

Z. Mi, H. P.T. Nguyen, S. Zhang, M. Djavid

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the achievement of InGaN/GaN dot-in-a-wire phosphor-free white light-emitting diodes, which can exhibit a record internal quantum efficiency of ∼57% and virtually zero efficiency droop for injection currents up to ∼2,200 A/cm².

Original language	English (US)
Title of host publication	2012 IEEE Photonics Conference, IPC 2012
Pages	429-430
Number of pages	2
DOIs	https://doi.org/10.1109/IPCon.2012.6358676
State	Published - 2012
Externally published	Yes
Event	25th IEEE Photonics Conference, IPC 2012 - Burlingame, CA, United States Duration: Sep 23 2012 → Sep 27 2012

Publication series

Name	2012 IEEE Photonics Conference, IPC 2012

Other

Other	25th IEEE Photonics Conference, IPC 2012
Country/Territory	United States
City	Burlingame, CA
Period	9/23/12 → 9/27/12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/IPCon.2012.6358676

Cite this

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title = "Ultrahigh-efficiency phosphor-free InGaN/GaN nanowire white light-emitting diodes on silicon",

abstract = "We report on the achievement of InGaN/GaN dot-in-a-wire phosphor-free white light-emitting diodes, which can exhibit a record internal quantum efficiency of ∼57% and virtually zero efficiency droop for injection currents up to ∼2,200 A/cm2.",

author = "Z. Mi and Nguyen, {H. P.T.} and S. Zhang and M. Djavid",

year = "2012",

doi = "10.1109/IPCon.2012.6358676",

language = "English (US)",

isbn = "9781457707315",

series = "2012 IEEE Photonics Conference, IPC 2012",

pages = "429--430",

booktitle = "2012 IEEE Photonics Conference, IPC 2012",

note = "25th IEEE Photonics Conference, IPC 2012 ; Conference date: 23-09-2012 Through 27-09-2012",

}

Mi, Z, Nguyen, HPT, Zhang, S & Djavid, M 2012, Ultrahigh-efficiency phosphor-free InGaN/GaN nanowire white light-emitting diodes on silicon. in 2012 IEEE Photonics Conference, IPC 2012., 6358676, 2012 IEEE Photonics Conference, IPC 2012, pp. 429-430, 25th IEEE Photonics Conference, IPC 2012, Burlingame, CA, United States, 9/23/12. https://doi.org/10.1109/IPCon.2012.6358676

TY - GEN

T1 - Ultrahigh-efficiency phosphor-free InGaN/GaN nanowire white light-emitting diodes on silicon

AU - Mi, Z.

AU - Nguyen, H. P.T.

AU - Zhang, S.

AU - Djavid, M.

PY - 2012

Y1 - 2012

N2 - We report on the achievement of InGaN/GaN dot-in-a-wire phosphor-free white light-emitting diodes, which can exhibit a record internal quantum efficiency of ∼57% and virtually zero efficiency droop for injection currents up to ∼2,200 A/cm2.

AB - We report on the achievement of InGaN/GaN dot-in-a-wire phosphor-free white light-emitting diodes, which can exhibit a record internal quantum efficiency of ∼57% and virtually zero efficiency droop for injection currents up to ∼2,200 A/cm2.

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DO - 10.1109/IPCon.2012.6358676

M3 - Conference contribution

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SN - 9781457707315

T3 - 2012 IEEE Photonics Conference, IPC 2012

SP - 429

EP - 430

BT - 2012 IEEE Photonics Conference, IPC 2012

T2 - 25th IEEE Photonics Conference, IPC 2012

Y2 - 23 September 2012 through 27 September 2012

ER -

Ultrahigh-efficiency phosphor-free InGaN/GaN nanowire white light-emitting diodes on silicon

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