Ultrahigh-efficiency phosphor-free InGaN/GaN nanowire white light-emitting diodes on silicon

Z. Mi, H. P.T. Nguyen, S. Zhang, M. Djavid

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the achievement of InGaN/GaN dot-in-a-wire phosphor-free white light-emitting diodes, which can exhibit a record internal quantum efficiency of ∼57% and virtually zero efficiency droop for injection currents up to ∼2,200 A/cm2.

Original languageEnglish (US)
Title of host publication2012 IEEE Photonics Conference, IPC 2012
Pages429-430
Number of pages2
DOIs
StatePublished - Dec 1 2012
Externally publishedYes
Event25th IEEE Photonics Conference, IPC 2012 - Burlingame, CA, United States
Duration: Sep 23 2012Sep 27 2012

Publication series

Name2012 IEEE Photonics Conference, IPC 2012

Other

Other25th IEEE Photonics Conference, IPC 2012
CountryUnited States
CityBurlingame, CA
Period9/23/129/27/12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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