Understanding amorphous states of phase-change memory using frenkel-poole model

Y. H. Shih, M. H. Lee, M. Breitwisch, R. Cheek, J. Y. Wu, B. Rajendran, Y. Zhu, E. K. Lai, C. F. Chen, H. Y. Cheng, A. Schrott, E. Joseph, R. Dasaka, S. Raoux, H. L. Lung, C. Lam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

A method based on Frenkel-Poole emission is proposed to model the amorphous state (high resistance state) in mushroom-type phase-change memory devices. The model provides unique insights to probe the device after amorphizing (RESET) operation. Even when the resistance appears the same under different RESET conditions, our model suggests that both the amorphous region size and the defect states are different. With this powerful new tool, detailed changes inside the amorphous GST for MLC operation and retention tests are revealed.

Original languageEnglish (US)
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages31.7.1-31.7.4
DOIs
StatePublished - 2009
Externally publishedYes
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: Dec 7 2009Dec 9 2009

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period12/7/0912/9/09

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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