@inproceedings{3a1b38e11e3e4779bdcf68bd4c2536b3,
title = "Understanding amorphous states of phase-change memory using frenkel-poole model",
abstract = "A method based on Frenkel-Poole emission is proposed to model the amorphous state (high resistance state) in mushroom-type phase-change memory devices. The model provides unique insights to probe the device after amorphizing (RESET) operation. Even when the resistance appears the same under different RESET conditions, our model suggests that both the amorphous region size and the defect states are different. With this powerful new tool, detailed changes inside the amorphous GST for MLC operation and retention tests are revealed.",
author = "Shih, {Y. H.} and Lee, {M. H.} and M. Breitwisch and R. Cheek and Wu, {J. Y.} and B. Rajendran and Y. Zhu and Lai, {E. K.} and Chen, {C. F.} and Cheng, {H. Y.} and A. Schrott and E. Joseph and R. Dasaka and S. Raoux and Lung, {H. L.} and C. Lam",
note = "Copyright: Copyright 2010 Elsevier B.V., All rights reserved.; 2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",
year = "2009",
doi = "10.1109/IEDM.2009.5424229",
language = "English (US)",
isbn = "9781424456406",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "31.7.1--31.7.4",
booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",
}