@inproceedings{29028bc3dc7a46efb58424409b8c44da,
title = "USB-C/A Charger with GaN FET",
abstract = "In this project we successfully designed a 65-Watt (W) USB-C and USB-A outlet charger for portable devices. The specifications for the charger are listed in Table II below. The difference with our charger compared to others in the market is the use of a Gallium Nitride (GaN) Field-Effect Transistor (FET) to process the switching conversion in the AC-DC conversion instead of a typical Silicon transistor. In this paper we will discuss the background of GaN transistors as well as the advantages of lower on-state drain to source resistance (Rds(on)) and parasitic capacitances that lead to improved efficiency. Then we will discuss the basic circuit topology of the 65W USB charger and the results of efficiency with the GaN FET used.",
keywords = "efficiency, GaN, switching",
author = "Satyajit Simhadri and Phillip Pong and Venkata Prasad",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 7th International Conference on Electrical Engineering and Green Energy, CEEGE 2024 ; Conference date: 28-06-2024 Through 01-07-2024",
year = "2024",
doi = "10.1109/CEEGE62093.2024.10744173",
language = "English (US)",
series = "2024 7th International Conference on Electrical Engineering and Green Energy, CEEGE 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "95--99",
booktitle = "2024 7th International Conference on Electrical Engineering and Green Energy, CEEGE 2024",
address = "United States",
}