UV inspection of EUV and SCALPEL reticles

D. W. Pettibone, N. Bareket, T. Liang, A. R. Stivers, S. D. Hector, P. J.S. Mangat, D. J. Resnick, M. Lercel, M. Lawliss, C. Magg, A. Novembre, R. Farrow

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


A UV inspection tool has been used to image and inspect Next Generation Lithography (NGL) reticles. Inspection images and simulations have been used to provide feedback to mask makers so that inspectability of NGL masks can be optimized. SCALPEL masks have high optical contrast and look much the same in reflection as conventional chrome on glass masks do in transmission. EPL stencil masks can be imaged well in reflection, but defects below the top surface, in the cutouts, may not be detectable optically. EUV masks that have been made to date tend to have relatively low contrast, with line edge profiles that are complex due to interference effects. Simulation results show that improved EUV inspection images can be obtained with a low reflectivity absorbing layer and proper choice of buffer layer thickness.

Original languageEnglish (US)
Pages (from-to)241-249
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2001
Externally publishedYes
Event20th Annual BACUS Symposium on Photomask Technology - Monterey, CL, United States
Duration: Sep 13 2000Sep 15 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


  • Defects
  • EUV
  • Mask inspection
  • NGL
  • Next Generation Lithography
  • Stencil mask


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