Variable-range hopping conductivity and magnetoresistance in n-CuGaSe2

K. G. Lisunov; E. Arushanov; G. A. Thomas; E. Bucher; J. H. Schön

doi:10.1063/1.1290454

Variable-range hopping conductivity and magnetoresistance in n-CuGaSe₂

K. G. Lisunov, E. Arushanov, G. A. Thomas, E. Bucher, J. H. Schön

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33 Scopus citations

Abstract

The low-temperature charge transport in H-CuGaSe₂ was investigated in zero and nonzero magnetic field. Both the Mott as well as the Shklovskii-Efros regimes of the variable-range hopping are observed in different temperature intervals. The complete set of the parameters describing the properties of the localized electrons (the localization radius, the dielectric permeability, the width of the Coulomb gap, and the values of density of states at the Fermi level) are obtained by analysis of the conductivity in zero field, on one hand, and the positive magnetoresistance in a small field, on the other hand. The negative magnetoresistance in low fields is observed in all specimens in both hopping regimes. Moreover, it is interpreted as a result of quantum interference between different paths of the tunneling electrons in conditions of scattering by intermediate centers.

Original language	English (US)
Pages (from-to)	4128-4134
Number of pages	7
Journal	Journal of Applied Physics
Volume	88
Issue number	7
DOIs	https://doi.org/10.1063/1.1290454
State	Published - Oct 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1290454

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title = "Variable-range hopping conductivity and magnetoresistance in n-CuGaSe2",

abstract = "The low-temperature charge transport in H-CuGaSe2 was investigated in zero and nonzero magnetic field. Both the Mott as well as the Shklovskii-Efros regimes of the variable-range hopping are observed in different temperature intervals. The complete set of the parameters describing the properties of the localized electrons (the localization radius, the dielectric permeability, the width of the Coulomb gap, and the values of density of states at the Fermi level) are obtained by analysis of the conductivity in zero field, on one hand, and the positive magnetoresistance in a small field, on the other hand. The negative magnetoresistance in low fields is observed in all specimens in both hopping regimes. Moreover, it is interpreted as a result of quantum interference between different paths of the tunneling electrons in conditions of scattering by intermediate centers.",

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T1 - Variable-range hopping conductivity and magnetoresistance in n-CuGaSe2

AU - Lisunov, K. G.

AU - Arushanov, E.

AU - Thomas, G. A.

AU - Bucher, E.

AU - Schön, J. H.

PY - 2000/10

Y1 - 2000/10

N2 - The low-temperature charge transport in H-CuGaSe2 was investigated in zero and nonzero magnetic field. Both the Mott as well as the Shklovskii-Efros regimes of the variable-range hopping are observed in different temperature intervals. The complete set of the parameters describing the properties of the localized electrons (the localization radius, the dielectric permeability, the width of the Coulomb gap, and the values of density of states at the Fermi level) are obtained by analysis of the conductivity in zero field, on one hand, and the positive magnetoresistance in a small field, on the other hand. The negative magnetoresistance in low fields is observed in all specimens in both hopping regimes. Moreover, it is interpreted as a result of quantum interference between different paths of the tunneling electrons in conditions of scattering by intermediate centers.

AB - The low-temperature charge transport in H-CuGaSe2 was investigated in zero and nonzero magnetic field. Both the Mott as well as the Shklovskii-Efros regimes of the variable-range hopping are observed in different temperature intervals. The complete set of the parameters describing the properties of the localized electrons (the localization radius, the dielectric permeability, the width of the Coulomb gap, and the values of density of states at the Fermi level) are obtained by analysis of the conductivity in zero field, on one hand, and the positive magnetoresistance in a small field, on the other hand. The negative magnetoresistance in low fields is observed in all specimens in both hopping regimes. Moreover, it is interpreted as a result of quantum interference between different paths of the tunneling electrons in conditions of scattering by intermediate centers.

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Variable-range hopping conductivity and magnetoresistance in n-CuGaSe₂

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