VARIABLES WHICH INFLUENCE SILICON SCHOTTKY SOLAR CELL PERFORMANCE.

W. A. Anderson; S. M. Vernon; A. E. Delahoy; K. K. Ng; P. Mathe; T. Poon

doi:10.1109/iedm.1975.188863

VARIABLES WHICH INFLUENCE SILICON SCHOTTKY SOLAR CELL PERFORMANCE.

W. A. Anderson, S. M. Vernon, A. E. Delahoy, K. K. Ng, P. Mathe, T. Poon

Research output: Contribution to conference › Paper › peer-review

4 Scopus citations

Abstract

Individual processing steps have been varied to determine the effect of Schottky barrier solar cell (SBSC) performance. A 100 direction Si wafer produces a better fill factor and current than does 111 direction Si. Silicon resistivity of 0. 4 or 2 omega -cm results in comparable cells. Sputter deposition of the metal causes the metal atoms to penetrate the silicon which produces a lower voltage as a result of a reduced barrier height. I-V data suggest the presence of a tunneling component in the current. This is verified by an activation energy plot. A better understanding of these current mechanisms should lead to improved solar cell efficiency.

Original language	English (US)
Pages	217-220
Number of pages	4
DOIs	https://doi.org/10.1109/iedm.1975.188863
State	Published - 1975
Externally published	Yes
Event	Int Electron Devices Meet, Tech Dig - Washington, DC, USA Duration: Dec 1 1975 → Dec 3 1975

Other

Other	Int Electron Devices Meet, Tech Dig
City	Washington, DC, USA
Period	12/1/75 → 12/3/75

All Science Journal Classification (ASJC) codes

General Engineering

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10.1109/iedm.1975.188863

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title = "VARIABLES WHICH INFLUENCE SILICON SCHOTTKY SOLAR CELL PERFORMANCE.",

abstract = "Individual processing steps have been varied to determine the effect of Schottky barrier solar cell (SBSC) performance. A 100 direction Si wafer produces a better fill factor and current than does 111 direction Si. Silicon resistivity of 0. 4 or 2 omega -cm results in comparable cells. Sputter deposition of the metal causes the metal atoms to penetrate the silicon which produces a lower voltage as a result of a reduced barrier height. I-V data suggest the presence of a tunneling component in the current. This is verified by an activation energy plot. A better understanding of these current mechanisms should lead to improved solar cell efficiency.",

author = "Anderson, {W. A.} and Vernon, {S. M.} and Delahoy, {A. E.} and Ng, {K. K.} and P. Mathe and T. Poon",

year = "1975",

doi = "10.1109/iedm.1975.188863",

language = "English (US)",

pages = "217--220",

note = "Int Electron Devices Meet, Tech Dig ; Conference date: 01-12-1975 Through 03-12-1975",

}

TY - CONF

T1 - VARIABLES WHICH INFLUENCE SILICON SCHOTTKY SOLAR CELL PERFORMANCE.

AU - Anderson, W. A.

AU - Vernon, S. M.

AU - Delahoy, A. E.

AU - Ng, K. K.

AU - Mathe, P.

AU - Poon, T.

PY - 1975

Y1 - 1975

N2 - Individual processing steps have been varied to determine the effect of Schottky barrier solar cell (SBSC) performance. A 100 direction Si wafer produces a better fill factor and current than does 111 direction Si. Silicon resistivity of 0. 4 or 2 omega -cm results in comparable cells. Sputter deposition of the metal causes the metal atoms to penetrate the silicon which produces a lower voltage as a result of a reduced barrier height. I-V data suggest the presence of a tunneling component in the current. This is verified by an activation energy plot. A better understanding of these current mechanisms should lead to improved solar cell efficiency.

AB - Individual processing steps have been varied to determine the effect of Schottky barrier solar cell (SBSC) performance. A 100 direction Si wafer produces a better fill factor and current than does 111 direction Si. Silicon resistivity of 0. 4 or 2 omega -cm results in comparable cells. Sputter deposition of the metal causes the metal atoms to penetrate the silicon which produces a lower voltage as a result of a reduced barrier height. I-V data suggest the presence of a tunneling component in the current. This is verified by an activation energy plot. A better understanding of these current mechanisms should lead to improved solar cell efficiency.

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DO - 10.1109/iedm.1975.188863

M3 - Paper

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EP - 220

T2 - Int Electron Devices Meet, Tech Dig

Y2 - 1 December 1975 through 3 December 1975

ER -

VARIABLES WHICH INFLUENCE SILICON SCHOTTKY SOLAR CELL PERFORMANCE.

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