VARIABLES WHICH INFLUENCE SILICON SCHOTTKY SOLAR CELL PERFORMANCE.

W. A. Anderson, S. M. Vernon, A. E. Delahoy, K. K. Ng, P. Mathe, T. Poon

Research output: Contribution to conferencePaperpeer-review

4 Scopus citations

Abstract

Individual processing steps have been varied to determine the effect of Schottky barrier solar cell (SBSC) performance. A 100 direction Si wafer produces a better fill factor and current than does 111 direction Si. Silicon resistivity of 0. 4 or 2 omega -cm results in comparable cells. Sputter deposition of the metal causes the metal atoms to penetrate the silicon which produces a lower voltage as a result of a reduced barrier height. I-V data suggest the presence of a tunneling component in the current. This is verified by an activation energy plot. A better understanding of these current mechanisms should lead to improved solar cell efficiency.

Original languageEnglish (US)
Pages217-220
Number of pages4
DOIs
StatePublished - 1975
EventInt Electron Devices Meet, Tech Dig - Washington, DC, USA
Duration: Dec 1 1975Dec 3 1975

Other

OtherInt Electron Devices Meet, Tech Dig
CityWashington, DC, USA
Period12/1/7512/3/75

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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