@inproceedings{2cd08de638c446ceb2bf6a582b6c39dc,
title = "Verilog-A compact model for a novel Cu/SiO2/W quantum memristor",
abstract = "In this paper, we develop a Verilog-A model for a memristive device that has shown non-volatile state transitions via half-integer quantized conductance states at room temperature and an on-off ratio of ∼ 103. The model captures the geometrical evolution of a nano-filament and maps it to conductance levels in the equivalent electrical circuit, thereby accurately capturing the DC I-V and transient response of the device. The suitability of the model for circuit simulations is illustrated via a 4 χ 4 crossbar array programming simulation in HSPICE which captures the multilevel programmability of the device.",
author = "Nandakumar, {S. R.} and Bipin Rajendran",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 ; Conference date: 06-09-2016 Through 08-09-2016",
year = "2016",
month = oct,
day = "20",
doi = "10.1109/SISPAD.2016.7605174",
language = "English (US)",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "169--172",
editor = "Peter Pichler and Eberhard Bar and Jurgen Lorenz",
booktitle = "2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016",
address = "United States",
}