Vertically Stacked Intraband Quantum Dot Devices for Mid-Wavelength Infrared Photodetection

Shihab Bin Hafiz, Mohammad M. Al Mahfuz, Dong Kyun Ko

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Intraband quantum dots are degenerately doped semiconductor nanomaterials that exhibit unique optical properties in mid- to long-wavelength infrared. To date, these quantum dots have been only studied as lateral photoconductive devices, while transitioning toward a vertically stacked structure can open diverse opportunities for investigating advanced device designs. Here, we report the first vertical intraband quantum dot heterojunction devices composed of Ag2Se/PbS/Ag2Se quantum dot stacks that bring the advantage of reduced dark conductivity with a simplified device fabrication procedure. We discuss the improvement in the colloidal synthesis of Ag2Se quantum dots that are critical for vertical device fabrication, identify an important process that determines the mid-wavelength infrared responsivity of the quantum dot film, and analyze the basic device characteristics and key detector performance parameters. Compared to the previous generation of Ag2Se quantum dot-based photoconductive devices, approximately 70 times increase in the mid-wavelength responsivity, at room temperature, is observed.

Original languageEnglish (US)
Pages (from-to)937-943
Number of pages7
JournalACS Applied Materials and Interfaces
Volume13
Issue number1
DOIs
StatePublished - Jan 13 2021

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Keywords

  • barrier detector
  • colloidal quantum dots
  • intraband
  • mid-wavelength infrared
  • silver selenide

Fingerprint Dive into the research topics of 'Vertically Stacked Intraband Quantum Dot Devices for Mid-Wavelength Infrared Photodetection'. Together they form a unique fingerprint.

Cite this