Voltage and current stress induced variations in TiN/HfSixO y/TiN MIM capacitors

D. Misra, Jyothi Kasinath, Arun N. Chandorkar

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this paper we have investigated the long-term reliability of TiN/HfSixOy/TiN Metal-Insulator-Metal (MIM) capacitors by using constant voltage stress (CVS) and constant current stress (CCS). No significant increase in leakage current was observed as a function of stress time. On the other hand, stress induced capacitance changes were observed due to change in quadratic and liner coefficients of permittivity nonlinearities. Stress-induced oxygen vacancy related defect formation believed to be the cause of this shift in permittivity.

Original languageEnglish (US)
Pages (from-to)270-273
Number of pages4
JournalMicroelectronics Reliability
Volume53
Issue number2
DOIs
StatePublished - Feb 1 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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