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Voltage and current stress induced variations in TiN/HfSi
x
O
y
/TiN MIM capacitors
D. Misra
, Jyothi Kasinath
, Arun N. Chandorkar
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
3
Scopus citations
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x
O
y
/TiN MIM capacitors'. Together they form a unique fingerprint.
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Keyphrases
Capacitance Change
50%
Constant Current Stress
50%
Constant Voltage Stress
50%
Current Stress
100%
Defect Formation
50%
Hand Stress
50%
Leakage Current
50%
Liner
50%
Long-term Reliability
50%
Metal-insulator-metal Capacitor
100%
Nonlinearity
50%
Oxygen Vacancy
50%
Permittivity
100%
Stress Variation
100%
Stress-driven
50%
Stress-induced
100%
Vacancy Defects
50%
Voltage Stress
100%
Engineering
Constant Voltage
33%
Induced Stress
100%
Metal-Insulator-Metal
100%
Nonlinearity
33%
Oxygen Vacancy
33%
Related Defect
33%
Material Science
Capacitance
50%
Capacitor
100%
Oxygen Vacancy
50%
Permittivity
100%