W-polycide gates with a thin polysilicon layer: Microstructure and resistivity

Y. O. Kim, J. Bevk, M. Furtsch, G. E. Georgiou, W. Mansfield, R. Masaitis, R. Opila, P. J. Silverman

Research output: Contribution to journalConference articlepeer-review


We use transmission electron microscopy and Auger electron spectroscopy to understand how depositing thin polysilicon layers on the top of tungsten polycide can reduce the resistivity of the films. Transmission electron microscopy shows no significant differences in the crystal structure, grain size, or dislocation density inside the films by adding a polysilicon cap, but it clearly shows roughening of the top interface. Auger depth profiling shows substantial reduction of the Si/W ratio in the capped films. Both results imply that the excess Si segregates to both polysilicon interfaces, effectively lowering the Si/W ratio and resulting in a low sheet resistance.

Original languageEnglish (US)
Pages (from-to)583-587
Number of pages5
JournalSolid State Phenomena
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1998 5th International Conference on Polycrystalline Semiconductors (POLYSE) - Bulk Materials, Thin Films and Devices - - Schwabisch Gmund, Ger
Duration: Sep 13 1998Sep 18 1998

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • General Materials Science
  • Condensed Matter Physics


Dive into the research topics of 'W-polycide gates with a thin polysilicon layer: Microstructure and resistivity'. Together they form a unique fingerprint.

Cite this