Abstract
We use transmission electron microscopy and Auger electron spectroscopy to understand how depositing thin polysilicon layers on the top of tungsten polycide can reduce the resistivity of the films. Transmission electron microscopy shows no significant differences in the crystal structure, grain size, or dislocation density inside the films by adding a polysilicon cap, but it clearly shows roughening of the top interface. Auger depth profiling shows substantial reduction of the Si/W ratio in the capped films. Both results imply that the excess Si segregates to both polysilicon interfaces, effectively lowering the Si/W ratio and resulting in a low sheet resistance.
Original language | English (US) |
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Pages (from-to) | 583-587 |
Number of pages | 5 |
Journal | Solid State Phenomena |
Volume | 67 |
DOIs | |
State | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1998 5th International Conference on Polycrystalline Semiconductors (POLYSE) - Bulk Materials, Thin Films and Devices - - Schwabisch Gmund, Ger Duration: Sep 13 1998 → Sep 18 1998 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- General Materials Science
- Condensed Matter Physics