Wafer emissivity independent temperature measurements

S. Abedrabbo, F. M. Tong, N. M. Ravindra, J. Gelpey, S. Marcus, A. T. Fiory

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A study on the techniques to yield wafer emissivity independent temperature measurements in rapid thermal processing has been presented. This study focuses on the Steag-AST Electronik approach to enhance wafer emissivity by using the Hotliner. The Hotliner comprises of a heavily doped p-Si substrate sandwiched with Si3N4/SiO2 from both sides. Experimental measurements on the optical properties of the Hotliner using a spectral emissometer operating in the wavelength range of 1-20 μm are presented here. Results of the simulation of the experimental data using the MIT/SEMATECH Multi-Rad model are discussed.

Original languageEnglish (US)
Pages (from-to)1323-1328
Number of pages6
JournalJournal of Electronic Materials
Volume27
Issue number12
DOIs
StatePublished - Dec 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Emissivity
  • Hotliner
  • Pyrometer
  • Si

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